参数资料
型号: SMAJ6.0E3/TR13
厂商: MICROSEMI CORP
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
封装: ROHS COMPLIANT, PLASTIC, SMA, 2 PIN
文件页数: 4/6页
文件大小: 484K
代理商: SMAJ6.0E3/TR13
400W Transient Voltage Suppressor (TVS) protection device
www.Microsemi.com
4/6
Copyright
2010
Mar Rev C
SMAJ5.0e3 to SMAJ440CAe3
Electrical characteristics (cont.)
(1)
Device
marking code
BREAKDOWN
VOLTAGE
(2), VBR
VBR (V) @ IT (mA)
DEVICE
UNI
BI
Min
Max
TEST
CURRENT IT
(mA)
STAND-OFF
VOLTAGE VWM
(V)
MAXIMUM
STANDBY
CURRENT
(4) ID
(A) @ VWM
MAXIMUM PEAK
PULSE
CURRENT
(3) IPP
(A)
MAXIMUM
CLAMPING
VOLTAGE VC (V)
@ IPP
SMAJ90e3 / SMAJ90Ce3
MRW
MZW
100
122
1.0
90
1.0
1.9
160
SMAJ90Ae3 / SMAJ90CAe3
MRX
MZX
100
111
1.0
90
1.0
2.1
146
SMAJ100e3 / SMAJ100Ce3
MRY
MZY
111
136
1.0
100
1.0
1.7
179
SMAJ100Ae3 / SMAJ100CAe3
MRZ
MZZ
111
123
1.0
100
1.0
1.9
162
SMAJ110e3 / SMAJ110Ce3
MSD
MVD
122
149
1.0
110
1.0
1.5
196
SMAJ110Ae3 / SMAJ110CAe3
MSE
MVE
122
135
1.0
110
1.0
1.7
177
SMAJ120e3 / SMAJ120Ce3
MSF
MVF
133
163
1.0
120
1.0
1.4
214
SMAJ120Ae3 / SMAJ120CAe3
MSG
MVG
133
147
1.0
120
1.0
1.6
193
SMAJ130e3 / SMAJ130Ce3
MSH
MVH
144
176
1.0
130
1.0
1.3
231
SMAJ130Ae3 / SMAJ130CAe3
MSK
MVK
144
159
1.0
130
1.0
1.4
209
SMAJ150e3 / SMAJ150Ce3
MSL
MVL
167
204
1.0
150
1.0
1.1
268
SMAJ150Ae3 / SMAJ150CAe3
MSM
MVM
167
185
1.0
150
1.0
1.2
243
SMAJ160e3 / SMAJ160Ce3
MSN
MVN
178
218
1.0
160
1.0
287
SMAJ160Ae3 / SMAJ160CAe3
MSP
MVP
178
197
1.0
160
1.0
1.2
259
SMAJ170e3 / SMAJ170Ce3
MSQ
MVQ
189
231
1.0
170
1.0
0.99
304
SMAJ170Ae3 / SMAJ170CAe3
MSR
MVR
189
209
1.0
170
1.0
1.09
275
SMAJ180Ae3 / SMAJ180CAe3
MST
MVT
201
222
1.0
180
1.0
1.4
292
SMAJ200Ae3 / SMAJ200CAe3
MSV
MVV
224
247
1.0
200
1.0
1.2
324
SMAJ220Ae3 / SMAJ220CAe3
MSX
MVX
246
272
1.0
220
1.0
1.1
356
SMAJ250Ae3 / SMAJ250CAe3
MSZ
MVZ
279
309
1.0
250
1.0
405
SMAJ300Ae3 / SMAJ300CAe3
MTE
MUE
335
371
1.0
300
1.0
0.8
486
SMAJ350Ae3 / SMAJ350CAe3
MTG
MUG
391
432
1.0
350
1.0
0.7
567
SMAJ400Ae3 / SMAJ400CAe3
MTK
MUK
447
494
1.0
400
1.0
0.6
648
SMAJ440Ae3 / SMAJ440CAe3
MTM
MUM
492
543
1.0
440
1.0
0.6
713
(1) All ratings at 25C unless specified otherwise
(2) VBR measured after IT applied for 300s, IT=square wave pulse or equivalent
(3) Surge current waveform per Fig.3 and derated per Fig.2
(4) For bidrectional types with VWM of 10 volts and less, the ID limit is doubled
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