参数资料
型号: SMB30A300-HE3
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: LEAD FREE, PLASTIC, SMB, 2 PIN
文件页数: 1/3页
文件大小: 261K
代理商: SMB30A300-HE3
SMB30A300
Document Number 88476
17-Oct-05
Vishay General Semiconductor
www.vishay.com
1
DO-214AA (SMB)
30 V
300 V
New Product
Asymmetric Transient Voltage Suppressor
Major Ratings and Characteristics
Features
Glass passivated chip junction
Ideal for automated placement
IPPM
13 A
VC
41.4 V
VBR at TVS
30 V
VBR at Diode
300 V
Tj max.
150 °C
Very fast response time
Low incremental surge resistance, excellent
clamping capability
Meets MSL level 1, per J-STD-020C
Solder Dip 260 °C, 40 seconds
Typical Applications
For use in wiper motor application, to replace varistor.
Mechanical Data
Case: DO-214AA (SMB)
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes TVS 30 V cathode end,
the cathode of 300 V is at the other terminal side.
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Notes:
(1) Pulse test: tp
≤ 50 ms
(2) Surge current waveform per Fig. 1
(3) All terms and symbols are consistant with ANSI/IEEE C62.35
(4) VWM means stand-off voltage
Parameter
Symbol
Value
Unit
Peak pulse current with a 10/1000 s waveform per (Fig. 1)
PPPM
13
A
Maximum reverse current of 30 V TVS side at VWM = 25.6 V
(3)(4)
ID
5.0
A
Maximum reverse current of 300 V Diode side at VWM = 243 V
(3)(4)
ID
1.0
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Device Type
Device
Marking
Code
Breakdown Voltage
V(BR)
at IT
(1) (V)
Test Current
IT (mA)
Typical junction
capacitance at 4.0 V,
1 MHz
CJ (pF)
Maximum Peak
Pulse Surge
Current IPPM
(2)
(Amps)
Maximum
Clamping
Voltage
at IPPM VC (V)
Min
Max
SMB30A300
30F
30V TVS
28.5
31.5
1.0
130
13.0
41.4
300 V Diode
270
360
1.0
72
-
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