参数资料
型号: SMB30A300
厂商: VISHAY SEMICONDUCTORS
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: PLASTIC, SMB, 2 PIN
文件页数: 2/3页
文件大小: 261K
代理商: SMB30A300
www.vishay.com
2
Document Number 88476
17-Oct-05
SMB30A300
Vishay Semiconductors
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
Package outline dimensions in inches (millimeters)
Figure 1. Pulse Waveform
Figure 2. Reverse Power Capability for TVS
0
50
100
150
I PPM
—P
e
a
k
P
u
lse
C
u
rrent,
%
I RSM
TJ =25
°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
tr = 10
sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000
sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
100
1000
10000
10
100
1000
10000
Re
v
erse
S
u
rge
P
o
w
er
(
W
)
Pulse Width (ms) - 1/2 Ipp Exponential Waveform
Figure 3. Typical Reverse Leakage Current
Figure 4. Typical Transient Thermal Impedance
5%
15% 25% 35% 45% 55%
65% 75% 85% 95%
1000000
100000
10000
1
0.100
0.010
0.001
IF
-
Instan
taneo
u
s
Re
v
erse
C
u
rren
t(
A)
Percentage of VBR
TJ = 150 °C, at 300 V
TJ = 150 °C, at 30 V
TJ = 25 °C, at 300 V
TJ = 25 °C, at 30 V
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
t - Pulse Duration (sec.)
T
ransient
Ther
mal
Impedance
(°C/
W
)
0.160 (4.06)
0.180 (4.57)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0 (0)
0.205 (5.21)
0.220 (5.59)
0.130 (3.30)
0.155 (3.94)
0.084 (2.13)
0.096 (2.44)
0.077 (1.95)
0.086 (2.20)
Cathode Band
DO-214AA (SMB)
0.085 MAX.
(2.159 MAX.)
0.220 REF
0.086 MIN.
(2.18 MIN.)
0.060 MIN.
(1.52 MIN.)
Mounting Pad Layout
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