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参数资料
| 型号： | SMBG51C/52-E3 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封装： | PLASTIC, SMBG, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 121K |
| 代理商： | SMBG51C/52-E3 |
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. V
F = 3.5V at IF = 50A (uni-directional only)
Device
Breakdown Voltage
Maximum
Device Type
Marking
V(BR) at IT(1)
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Modified
Code
(V)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
Gull Wing
UNI
BI
Min
Max
IT (mA)
VWM (V)
I D (
A) (3)
(A)(2)
VC (V)
+SMBG33
ML
CL
36.7
44.9
1.0
33
1.0
10.2
59.0
+SMBG33A
MM
CM
36.7
40.6
1.0
33
1.0
11.3
53.3
+SMBG36
MN
CN
40.0
48.9
1.0
36
1.0
9.3
64.3
+SMBG36A
MP
CP
40.0
44.2
1.0
36
1.0
10.3
58.1
+SMBG40
MQ
CQ
44.4
54.3
1.0
40
1.0
8.4
71.4
+SMBG40A
MR
CR
44.4
49.1
1.0
40
1.0
9.3
64.5
+SMBG43
MS
CS
47.8
58.4
1.0
43
1.0
7.8
76.7
+SMBG43A
MT
CT
47.8
52.8
1.0
43
1.0
8.6
69.4
+SMBG45
MU
50.0
61.1
1.0
45
1.0
7.5
80.3
+SMBG45A
MV
50.0
55.3
1.0
45
1.0
8.3
72.7
+SMBG48
MW
53.3
65.1
1.0
48
1.0
7.0
85.5
+SMBG48A
MX
53.3
58.9
1.0
48
1.0
7.8
77.4
+SMBG51
MY
56.7
69.3
1.0
51
1.0
6.6
91.1
+SMBG51A
MZ
56.7
62.7
1.0
51
1.0
7.3
82.4
+SMBG54
ND
60.0
73.3
1.0
54
1.0
6.2
96.3
+SMBG54A
NE
60.0
66.3
1.0
54
1.0
6.9
87.1
+SMBG58
NF
64.4
78.7
1.0
58
1.0
5.8
103
+SMBG58A
NG
64.4
71.2
1.0
58
1.0
6.4
93.6
+SMBG60
NH
66.7
81.5
1.0
60
1.0
5.6
107
+SMBG60A
NK
66.7
73.7
1.0
60
1.0
6.2
96.8
+SMBG64
NL
71.1
86.9
1.0
64
1.0
5.3
114
+SMBG64A
NM
71.1
78.6
1.0
64
1.0
5.8
103
+SMBG70
NN
77.8
95.1
1.0
70
1.0
4.8
125
+SMBG70A
NP
77.8
86.0
1.0
70
1.0
5.3
113
+SMBG75
NQ
83.3
102
1.0
75
1.0
4.5
134
+SMBG75A
NR
83.3
92.1
1.0
75
1.0
5.0
121
+SMBG78
NS
86.7
106
1.0
78
1.0
4.3
139
+SMBG78A
NT
86.7
95.8
1.0
78
1.0
4.8
126
+SMBG85
NU
94.4
115
1.0
85
1.0
4.0
151
+SMBG85A
NV
94.4
104
1.0
85
1.0
4.4
137
+SMBG90
NW
100
122
1.0
90
1.0
3.8
160
+SMBG90A
NX
100
111
1.0
90
1.0
4.1
146
+SMBG100
NY
111
136
1.0
100
1.0
3.4
179
+SMBG100A
NZ
111
123
1.0
100
1.0
3.7
162
+SMBG110
PD
122
149
1.0
110
1.0
3.1
196
+SMBG110A
PE
122
135
1.0
110
1.0
3.4
177
+SMBG120
PF
133
163
1.0
120
1.0
2.8
214
+SMBG120A
PG
133
147
1.0
120
1.0
3.1
193
+SMBG130
PH
144
176
1.0
130
1.0
2.6
231
+SMBG130A
PK
144
159
1.0
130
1.0
2.9
209
+SMBG150
PL
167
204
1.0
150
1.0
2.2
268
+SMBG150A
PM
167
185
1.0
150
1.0
2.5
243
+SMBG160
PN
178
218
1.0
160
1.0
2.1
287
+SMBG160A
PP
178
197
1.0
160
1.0
2.3
259
+SMBG170
PQ
189
231
1.0
170
1.0
2.0
304
+SMBG170A
PR
189
209
1.0
170
1.0
2.2
275
SMBG188
PT
209
255
1.0
188
1.0
1.7
344
SMBG188A
PS
209
231
1.0
188
1.0
2.0
328
Notes: (1) Pulse test: tp
≤ 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
SMBG5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Document Number 88456
www.vishay.com
24-Jul-03
3
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相关代理商/技术参数 |
参数描述 |
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| SMBG51CA/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG51CA/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG51CA/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG51CA/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG51CA-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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