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参数资料
| 型号： | SMBG64CTR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 4/4页 |
| 文件大小： | 182K |
| 代理商： | SMBG64CTR |
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMBJ5.0 thru SMBJ170A, CA, e3
and SMBG5.0 thru SMBG170A, CA, e3
SMB5.0–
170AC,
e3
GRAPHS
50
30
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
P
PP
–
Peak
Pulse
Power
–
kW
TC = 25
oC
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
1000
10,000
Test waveform parameters: tr=10
μs, tw=1000 μs
tw – Pulse Width -
μs
FIGURE 2
FIGURE 1
Pulse Waveform for
Peak Pulse Power vs. Pulse Time
Exponential Surge
PAD LAYOUT
INCHES
mm
A
.260
6.60
B
.085
2.16
C
.110
2.79
INCHES
mm
A
0.320
8.13
B
0.085
2.16
C
0.110
2.79
C
–
Ca
pa
cita
nce
-
Pi
cofarads
Microsemi
Scottsdale Division
Page 4
Copyright
2007
6-20-2007 REV H
TL Lead Temperature
oC
V(BR) - Breakdown Voltage – Volts
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMBJ
SMBG
FIGURE 3 -
Derating Curve
FIGURE 4
Typical Capacitance vs Breakdown Voltage
PACKAGE DIMENSIONS
A
B
C
D
E
F
K
L
MIN
.077
.160
.130
.205
.077
.235
.015
.030
MAX
.083
.180
.155
.220
.104
.255
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
1.96
4.06
3.30
5.21
1.95
5.97
.381
.760
MAX
2.10
4.57
3.94
5.59
2.65
6.48
.762
1.520
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBG65 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
| SMBG65A | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:UNI- AMD BI-DIRECTIONAL SURFACE MOUNT |
| SMBG7.0 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:SURFACE MOUNT 600 Watt Transient Voltage Suppressor |
| SMBG7.0A | 制造商:Microsemi Corporation 功能描述:Diode TVS Single Uni-Dir 7V 600W 2-Pin DO-215AA |
| SMBG7.0A/2 | 制造商:Vishay Semiconductors 功能描述:Diode TVS Single Uni-Dir 7V 600W 2-Pin SMBG T/R |
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