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参数资料
| 型号： | SMBG90A-HE3/52 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBG, 2 PIN |
| 文件页数： | 3/6页 |
| 文件大小： | 97K |
| 代理商： | SMBG90A-HE3/52 |
Document Number 88456
08-Sep-06
www.vishay.com
3
SMBG5.0 thru SMBG188CA
Vishay General Semiconductor
Note:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMBG/SMBJ5.0CA, the maximum V(BR) is 7.25 V
(6) VF = 3.5 V at IF = 50 A (uni-directional only)
(+) Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number
E136766 for both uni-directional and bi-directional devices
(+)SMBG43
MS
CS
47.8
58.4
1.0
43
1.0
7.8
76.7
(+)SMBG43A
MT
CT
47.8
52.8
1.0
43
1.0
8.6
69.4
(+)SMBG45
MU
50.0
61.1
1.0
45
1.0
7.5
80.3
(+)SMBG45A
MV
50.0
55.3
1.0
45
1.0
8.3
72.7
(+)SMBG48
MW
53.3
65.1
1.0
48
1.0
7.0
85.5
(+)SMBG48A
MX
53.3
58.9
1.0
48
1.0
7.8
77.4
(+)SMBG51
MY
56.7
69.3
1.0
51
1.0
6.6
91.1
(+)SMBG51A
MZ
56.7
62.7
1.0
51
1.0
7.3
82.4
(+)SMBG54
ND
60.0
73.3
1.0
54
1.0
6.2
96.3
(+)SMBG54A
NE
60.0
66.3
1.0
54
1.0
6.9
87.1
(+)SMBG58
NF
64.4
78.7
1.0
58
1.0
5.8
103
(+)SMBG58A
NG
64.4
71.2
1.0
58
1.0
6.4
93.6
(+)SMBG60
NH
66.7
81.5
1.0
60
1.0
5.6
107
(+)SMBG60A
NK
66.7
73.7
1.0
60
1.0
6.2
96.8
(+)SMBG64
NL
71.1
86.9
1.0
64
1.0
5.3
114
(+)SMBG64A
NM
71.1
78.6
1.0
64
1.0
5.8
103
(+)SMBG70
NN
77.8
95.1
1.0
70
1.0
4.8
125
(+)SMBG70A
NP
77.8
86.0
1.0
70
1.0
5.3
113
(+)SMBG75
NQ
83.3
102
1.0
75
1.0
4.5
134
(+)SMBG75A
NR
83.3
92.1
1.0
75
1.0
5.0
121
(+)SMBG78
NS
86.7
106
1.0
78
1.0
4.3
139
(+)SMBG78A
NT
86.7
95.8
1.0
78
1.0
4.8
126
(+)SMBG85
NU
94.4
115
1.0
85
1.0
4.0
151
(+)SMBG85A
NV
94.4
104
1.0
85
1.0
4.4
137
(+)SMBG90
NW
100
122
1.0
90
1.0
3.8
160
(+)SMBG90A
NX
100
111
1.0
90
1.0
4.1
146
(+)SMBG100
NY
111
136
1.0
100
1.0
3.4
179
(+)SMBG100A
NZ
111
123
1.0
100
1.0
3.7
162
(+)SMBG110
PD
122
149
1.0
110
1.0
3.1
196
(+)SMBG110A
PE
122
135
1.0
110
1.0
3.4
177
(+)SMBG120
PF
133
163
1.0
120
1.0
2.8
214
(+)SMBG120A
PG
133
147
1.0
120
1.0
3.1
193
(+)SMBG130
PH
144
176
1.0
130
1.0
2.6
231
(+)SMBG130A
PK
144
159
1.0
130
1.0
2.9
209
(+)SMBG150
PL
167
204
1.0
150
1.0
2.2
268
(+)SMBG150A
PM
167
185
1.0
150
1.0
2.5
243
(+)SMBG160
PN
178
218
1.0
160
1.0
2.1
287
(+)SMBG160A
PP
178
197
1.0
160
1.0
2.3
259
(+)SMBG170
PQ
189
231
1.0
170
1.0
2.0
304
(+)SMBG170A
PR
189
209
1.0
170
1.0
2.2
275
SMBG188
PT
209
255
1.0
188
1.0
1.7
344
SMBG188A
PS
209
231
1.0
188
1.0
2.0
328
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
GULL WING
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
V(BR) AT IT
(1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (A)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI
BI
MIN
MAX
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相关代理商/技术参数 |
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| SMBG90CA/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG90CA/5 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG90CA/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG90CA/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBG90CA/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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