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参数资料
| 型号： | SMBJ110C |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 118K |
| 代理商： | SMBJ110C |
SMBJ SERIES
SMB
All Dimensions in millimeter
SMB
DIM.
MIN.
MAX.
A
C
D
E
F
G
H
B
4.06
4.57
3.94
3.30
1.96
2.21
0.31
0.15
5.21
5.59
0.05
0.20
2.01
2.50
0.76
1.52
C
B
A
H
E
F
G
D
FEATURES
For surface mounted applications
Reliable low cost construction utilizing molded plastic
technique
Plastic material has UL flammability classification 94V-O
Typical IR less than 1uA above 10V
Fast response time: typically less than 1.0ns for
Uni-direction,less than 5.0ns for Bi-direction,form 0 Volts
to BV min
MECHANICAL DATA
Case : Molded plastic
Polarity : by cathode band denotes uni-directional device
none cathode band denotes bi-directional device
Weight : 0.003 ounces, 0.093 gram
SURFACE MOUNT
UNIDIRECTIONAL AND BIDIRECTIONAL
TRANSIENT VOLTAGE SUPPRESSORS
STAND-OFF VOLTAGE - 5.0 to 170 Volts
POWER DISSIPATION - 600 WATTS
NOTES : 1. Non-repetitive current pulse, per fig. 3 and derated above TJ= 25 ℃ per fig.1.
2. 8.3ms single half-sine wave duty cycle= 4 pulses maximum per minute (unidirectional units only).
3. VF= 3.5V on SMBJ5.0 thru SMBJ90A devices and VF= 5.0V on SMBJ100 thru SMBJ170A devices.
4. Thermal resistance from junction to ambient, lead and case.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SEMICONDUCTOR
LITE-ON
REV. 6, May-2009, KSIB02
IFSM
Peak Forward Surge Current 8.3ms single
half sine-wave@Tj=25
(Note 2)
℃
100
AMPS.
UNIT
PM(AV)
1.5
WATTS
Steady State Power Dissipation at TL =120
lead
℃
lenghts 0.375" (9.5mm) , see fig.4
Without Heatshink
PPK
WATTS
PEAK POWER DISSIPATION AT TA = 25
,
℃
TP = 1ms (Note 1)
SYMBOLS
VALUE
600
CHARACTERISTICS
Maximum Instantaneous forward voltage
at 50A for unidirectional devices only (Note 3)
VF
SEE NOTE 3
Volts
R0JL
Typical Thermal Resistance (Note 4)
90
21
25
C/W
R0JA
R0JC
TJ
Operating Temperature Range
-55 to +175
TSTG
Storage Temperature Range
-55 to +175
C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ110C/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 110V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110C/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 110V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110C/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 110V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110C/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 110V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ110CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 110Vr 600W 3.4A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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