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| 型号： | SMBJ12A-E3/52 |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | TVS UNIDIRECT 600W 12V 5% SMB |
| 产品目录绘图： | SMBJ Series |
| 标准包装： | 1 |
| 系列： | TransZorb® |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | DO-214AA（SMB） |
| 包装： | 剪切带 (CT) |
| 产品目录页面： | 2389 (CN2011-ZH PDF) |
| 其它名称： | SMBJ12A-E3/52GICT |
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
Surface Mount T RANS Z ORB? Transient Voltage Suppressors
FEATURES
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Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in uni-directional and bi-directional
600 W peak pulse power capability with a
10/1000 μs waveform, repetitive rate (duty
cycle): 0.01 %
Excellent clamping capability
Very fast response time
Low incremental surge resistance
DO-214AA (SMB J-Bend)
?
Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
? AEC-Q101 qualified
? Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
V WM
P PPM
I FSM (uni-directional only)
T J max.
5.0 V to 188 V
600 W
100 A
150 °C
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting
on ICs, MOSFET, signal lines of sensor units for consumer,
computer, industrial, and telecommunication.
MECHANICAL DATA
Case: DO-214AA (SMBJ)
DEVICES FOR BI-DIRECTION APPLICATIONS
For bi-directional devices use CA suffix (e.g. SMBJ10CA).
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Electrical characteristics apply in both directions.
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: For uni-directional types the band denotes
cathode end, no marking on bi-directional types
MAXIMUM RATINGS (T A = 25 °C unless otherwise noted)
PARAMETER
Peak pulse power dissipation with a 10/1000 μs waveform (1)(2) (fig. 1)
SYMBOL
P PPM
VALUE
600
UNIT
W
Peak pulse current with a 10/1000 μs
waveform (1)
I PPM
See next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only
Operating junction and storage temperature range
(2)
I FSM
T J , T STG
100
- 55 to + 150
A
°C
Notes
(1) Non-repetitive current pulse, per fig. 3 and derated above T
A = 25 °C per fig. 2.
(2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal
Revision: 26-Jul-12
1
Document Number: 88392
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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| SMBJ12AGITRND | 制造商:GENERAL II 功能描述:NEW |
| SMBJ12AHE3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ12AHE3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ12AHE3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ12AHE3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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