参数资料
| 型号： | SMBJ12AONT3 |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/6页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER UNIDIR 600W 12V SMB |
| 产品变化通告： | Product Obsolescence 06/Oct/2006 |
| 标准包装： | 2,500 |
| 系列： | SMBJ |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.2V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 带卷 (TR) |
| 其它名称： | SMBJ12AONT3OS |
SMBJ12AON
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitive
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 3.
The inductive effects in the device are due to actual
turn‐on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 4. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. The SMB series have
a very good response time, typically < 1 ns and negligible
inductance. However, external inductive effects could
produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as
close as possible to the equipment or components to be
protected will minimize this overshoot.
Some input impedance represented by Z in is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
If the duty cycle increases, the peak power must be
reduced as indicated by the curves of Figure 5. Average
power must be derated as the lead or ambient temperature
rises above 25 ° C. The average power derating curve
normally given on data sheets may be normalized and used
for this purpose.
V
V in (TRANSIENT)
V
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
V in (TRANSIENT)
V L
V L
V in
t d
t D = TIME DELAY DUE TO CAPACITIVE EFFECT
Figure 3.
t
Figure 4.
t
1
0.7
0.5
0.3
0.2
PULSE WIDTH
0.1
0.07
0.05
0.03
0.02
10 m s
10 ms
1 ms
100 m s
0.01
0.1 0.2
0.5
1
2 5 10
20
50 100
D, DUTY CYCLE (%)
Figure 5. Typical Derating Factor for Duty Cycle
http://onsemi.com
4
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相关代理商/技术参数 |
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| SMBJ12AONT3G | 功能描述:TVS 二极管 - 瞬态电压抑制器 12V 600W RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ12A-TP | 功能描述:TVS 二极管 - 瞬态电压抑制器 12V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ12ATR | 功能描述:TVS DIODE 12VWM 19.9VC SMB 制造商:smc diode solutions 系列:SMBJ 包装:剪切带（CT） 零件状态:有效 类型:齐纳 单向通道:1 双向通道:- 电压 - 反向关态（典型值）:12V 电压 - 击穿（最小值）:13.3V 电压 - 箝位（最大值）@ Ipp:19.9V 电流 - 峰值脉冲（10/1000μs）:30.2A 功率 - 峰值脉冲:600W 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMB（DO-214AA） 标准包装:1 |
| SMBJ12A-TR | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ12AVCL | 制造商:STMicroelectronics 功能描述:SMBJ12AVCL - Tape and Reel |
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