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参数资料
型号： SMBJ12AVCL-52
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装： PLASTIC PACKAGE-2
文件页数： 1/3页
文件大小： 31K
代理商： SMBJ12AVCL-52
SMBJ12AVCL
Vishay Semiconductors
formerly General Semiconductor
Document Number 88393
www.vishay.com
5-Mar-02
1
New Product
Surface Mount TransZorb
Transient Voltage Suppressor
Peak Pulse Power 600W
Steady State Power 5W
Stand-off Voltage 12V
0.180 (4.57)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.008
(0.203)
Max.
0.220 (5.59)
0.205 (5.21)
0.060 (1.52)
0.030 (0.76)
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.096 (2.44)
0.084 (2.13)
Cathode Band
DO-214AA
(SMB)
Dimensions in
inches and
(millimeters)
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Protects voltage sensitive IC's and MOS technology
Glass Passivated Junction
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Excellent Clamping capability
Available in unidirectional only
Mechanical Data
Case: JEDEC DO-214AA molded plastic body over
passivated junction
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity: The band denotes the cathode, which is positive
with respect to the anode under normal TVS operation
Mounting Position: Any
Weight: 0.003 oz., 0.093 g
Packaging Codes – Options (Antistatic):
51 – 2K per Bulk box, 20K/carton
52 – 750 per 7" plastic Reel (12mm tape), 15K/carton
5B – 3.2K per 13" plastic Reel (12mm tape), 32K/carton
Mounting Pad Layout
Maximum Ratings and Thermal Characteristics TA= 25OC unless otherwise noted.
Parameter
Symbol
SMBJ12AVC
Unit
Device marking code
BUX
Steady state power dissipation(3), TA = 50
°C
PM(AV)
5.0
W
Peak pulse power dissipation (Fig.1)(1)
PPPM
600
W
Stand-off voltage
VWM
12.0
V
Typical thermal resistance junction-to-lead
R
θJL
20
°C/W
Typical thermal resistance junction-to-ambient
R
θJA
100
°C/W
Storage temperature range
TSTG
–55 to +175
°C
Maximum junction temperature
TJ
150
°C
Electrical Characteristics TA= 25OC unless otherwise noted.
Min - Max. breakdown voltage at 1.0mA
V(BR)
13.2 – 14.3
V
Max. clamping voltage at 17.5A, 1.4/6.5
s-waveform
Vc
15.8
V
Maximum DC reverse leakage current at VWM
ID
5.0
A
Typical temperature coefficient of V(BR)
∝T
19.9
mV°C
Notes: (1) Non repetitive current pulse per Fig.3 and derated above 25OC
(2) Pulse test: tp < 50ms
(3) On infinite heatsink
0.106 MAX
(2.69 MAX)
0.050 MIN
(1.27 MIN)
0.220 REF
0.083 MIN
(2.10 MIN)
相关PDF资料
PDF描述
SMBJ12AVCL-5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ12AVCL 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ130CA-HE3/52 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ100-HE3/5B 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
SMBJ100CA-HE3/5B 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
相关代理商/技术参数
参数描述
SMBJ12C 功能描述:TVS 二极管 - 瞬态电压抑制器 12Vr 600W 30.2A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ12C/1 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ12C/2 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ12C/2B 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMBJ12C/5 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 12V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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