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参数资料
型号： SMBJ18A-51-E3
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装： PLASTIC, SMB, 2 PIN
文件页数： 2/5页
文件大小： 111K
代理商： SMBJ18A-51-E3
www.vishay.com
Document Number 88392
2
19-Apr-04
SMBJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 50A (uni-directional only)
Device
Breakdown Voltage
Maximum
Device Type
Marking
V(BR) at IT(1)
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Modified
Code
(V)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
“J” Bend Lead
UNI
BI
Min
Max
IT (mA)
VWM (V)
ID (A)
(3)
(A)(2)
VC (V)
+SMBJ5.0
KD
6.40
7.82
10
5.0
800
62.5
9.6
+SMBJ5.0A(5)
KE
6.40
7.07
10
5.0
800
65.2
9.2
+SMBJ6.0
KF
6.67
8.15
10
6.0
800
52.6
11.4
+SMBJ6.0A
KG
6.67
7.37
10
6.0
800
58.3
10.3
+SMBJ6.5
KH
AH
7.22
8.82
10
6.5
500
48.8
12.3
+SMBJ6.5A
KK
AK
7.22
7.98
10
6.5
500
53.6
11.2
+SMBJ7.0
KL
7.78
9.51
10
7.0
200
45.1
13.3
+SMBJ7.0A
KM
7.78
8.60
10
7.0
200
50.0
12.0
+SMBJ7.5
KN
AN
8.33
10.2
1.0
7.5
100
42.0
14.3
+SMBJ7.5A
KP
AP
8.33
9.21
1.0
7.5
100
46.5
12.9
+SMBJ8.0
KQ
AQ
8.89
10.9
1.0
8.0
50
40.0
15.0
+SMBJ8.0A
KR
AR
8.89
9.83
1.0
8.0
50
44.1
13.6
+SMBJ8.5
KS
AS
9.44
11.5
1.0
8.5
20
37.7
15.9
+SMBJ8.5A
KT
AT
9.44
10.4
1.0
8.5
20
41.7
14.4
+SMBJ9.0
KU
AU
10.0
12.2
1.0
9.0
10
35.5
16.9
+SMBJ9.0A
KV
AV
10.0
11.1
1.0
9.0
10
39.0
15.4
+SMBJ10
KW
AW
11.1
13.6
1.0
10
5.0
31.9
18.8
+SMBJ10A
KX
AX
11.1
12.3
1.0
10
5.0
35.3
17.0
+SMBJ11
KY
12.2
14.9
1.0
11
5.0
29.9
20.1
+SMBJ11A
KZ
12.2
13.5
1.0
11
5.0
33.0
18.2
+SMBJ12
LD
BD
13.3
16.3
1.0
12
5.0
27.3
22.0
+SMBJ12A
LE
BE
13.3
14.7
1.0
12
5.0
30.2
19.9
+SMBJ13
LF
14.4
17.6
1.0
13
1.0
25.2
23.8
+SMBJ13A
LG
14.4
15.9
1.0
13
1.0
27.9
21.5
+SMBJ14
LH
BH
15.6
19.1
1.0
14
1.0
23.3
25.8
+SMBJ14A
LK
BK
15.6
17.2
1.0
14
1.0
25.9
23.2
+SMBJ15
LL
BL
16.7
20.4
1.0
15
1.0
22.3
26.9
+SMBJ15A
LM
BM
16.7
18.5
1.0
15
1.0
24.6
24.4
+SMBJ16
LN
17.8
21.8
1.0
16
1.0
20.8
28.8
+SMBJ16A
LP
LM
17.8
19.7
1.0
16
1.0
23.1
26.0
+SMBJ17
LQ
18.9
23.1
1.0
17
1.0
19.7
30.5
+SMBJ17A
LR
18.9
20.9
1.0
17
1.0
21.7
27.6
+SMBJ18
LS
BS
20.0
24.4
1.0
18
1.0
18.6
32.2
+SMBJ18A
LT
BT
20.0
22.1
1.0
18
1.0
20.5
29.2
+SMBJ20
LU
22.2
27.1
1.0
20
1.0
16.8
35.8
+SMBJ20A
LV
22.2
24.5
1.0
20
1.0
18.5
32.4
+SMBJ22
LW
BW
24.4
29.8
1.0
22
1.0
15.2
39.4
+SMBJ22A
LX
BX
24.4
26.9
1.0
22
1.0
16.9
35.5
+SMBJ24
LY
BY
26.7
32.6
1.0
24
1.0
14.0
43.0
+SMBJ24A
LZ
BZ
26.7
29.5
1.0
24
1.0
15.4
38.9
+SMBJ26
MD
CD
28.9
35.3
1.0
26
1.0
12.9
46.6
+SMBJ26A
ME
CE
28.9
31.9
1.0
26
1.0
14.3
42.1
+SMBJ28
MF
31.1
38.0
1.0
28
1.0
12.0
50.0
+SMBJ28A
MG
31.1
34.4
1.0
28
1.0
13.2
45.4
+SMBJ30
MH
CH
33.3
40.7
1.0
30
1.0
11.2
53.5
+SMBJ30A
MK
CK
33.3
36.8
1.0
30
1.0
12.4
48.4
Notes: (1) Pulse test: tp ≤ 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bidirectional SMBG/SMBJ5.0CA, the maximum V(BR) is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
相关PDF资料
PDF描述
SMBJ18A-52-E3 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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