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参数资料
| 型号： | SMBJ18C |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 230K |
| 代理商： | SMBJ18C |
Silicon Avalanche Diodes
262
www .littelfuse .com
FEATURES
RoHS compliant
Voltage ratings from 5 to 440 volts
For surface mounted applications in order to optimize
board space
Low profile package
Built-in strain relief
Glass passivated junction
Low lead inductance
Excellent clamping capability
Repetition Rate (duty cycle): 0.01%
Fast response time: typically less than 1.0ps from 0 Volts to
BV for unidirectional types
Typical IR less than 1 A above 10V
High Temperature soldering: 250C/10 seconds at terminals
Agency Approvals: Recognized under the Components Program
of Underwriters Laboratories.
Agency File Number: E128662
SMBJ Series
600W Surface Mount Transient Voltage Supressors
MAXIMUM RATINGS AND CHARACTERISTICS
@25C AMBIENT TEMPERATURE (unless otherwise noted)
PARAMETER
Peak pulse power Dissipation on
10/1000s waveform
(note 1,2, FIG.1)
Peak pulse current of on 10\1000s
waveform (note 1, FIG.3)
Peak forward Surge Current, 8.3ms
Single Half SIne Wave Superimposed
on Rated Load, (JEDEC Method)
(note 2.3)
Operating junction and Storage
Temperature Range
VALUE
Min
600
SEE TABLE 1
100
-55 to +150
UNIT
Watts
Amps
°C
Note 1. Non-repetitive current pulse, per Fig.3 and derated above
TA= 25C per Fig.2
Note 2. Mounted on 5.0mm2(0.03mm thick) Copper Pads to each
terminal
Note 3. 8.3 ms single half sine-wave, or equivalent square wave,
Duty cycle= 4 pulses per minute
SYMBOL
PPPM
IPPM
IPSM
Tj, TsTG
SMBJ
Voltage
C A
Bi-Directional
5% Voltage Tolerance
Tape and reeled (3000 pcs)
ORDERING INFORMATION
RoHS
Mechanical Specifications:
Weight:
0.003ounce, 0.093 gram
Case:
JEDEC DO-214AA Molded Plastic over
glass passivated junction
Mounting Position:
Any
Polarity:
Color band denotes cathode except
Bidirectional
Terminal:
Solder Plated solderable per
MIL-STD-750, Method 2026
Standard Packaging:
12mm tape (EIA STF RS-481)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ18C/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 18V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ18C/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 18V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ18C/5 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 18V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ18C/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 18V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ18C/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 18V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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