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参数资料
| 型号： | SMBJ250A |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 139K |
| 代理商： | SMBJ250A |
23
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
SMBJ Series
Surface Mount – 600W > SMBJ series
Please refer to http://www.Littelfuse.com/series/SMBJ.html for current information.
SMBJ
S
eries
Description
Agency Approvals
SMBJ Series
The SMBJ series is designed specically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
applications to optimize
board space
temperature coefcient
ΔV
BR = 0.1% x VBR@25°C x ΔT
junction
capability at 10×1000μs
waveform, repetition rate
(duty cycles):0.01%
typically less than 1.0ps
from 0V to BV min
capability
resistance
R less than 1μA
above 12V
soldering guaranteed:
260°C/40 seconds at
terminals
Underwriters Laboratory
Flammability 94V-O
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Maximum Ratings and Thermal Characteristics
(T
A=25
O
C unless otherwise noted)
Parameter
Symbol
Value
Unit
Peak Pulse Power Dissipation at
T
A=25C by 10x1000μs waveform
(Fig.1)(Note 1), (Note 2)
P
PPM
600
W
Power Dissipation on innite heat
sink at T
A=50
O
C
P
M(AV)
5.0
W
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
I
FSM
100
A
Maximum Instantaneous Forward
Voltage at 50A for Unidirectional
only (Note 4)
V
F
3.5V/5.0
V
Operating Junction and Storage
Temperature Range
T
J, TSTG
-65 to 150
°C
Typical Thermal Resistance Junction
to Lead
R
uJL
20
°C/W
Typical Thermal Resistance Junction
to Ambient
R
uJA
100
°C/W
Notes:
1. Non-repetitive current pulse , per Fig. 3 and derated above T
A = 25
O
C per Fig. 2.
2. Mounted on copper pad area of 0.2x0.2” (5.0 x 5.0mm) to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only, duty cycle=4 per minute maximum.
4. V
F<3.5V for VBR _
<
200V and V
F<5.0V for VBR _
>
201V.
AGENCY
AGENCY FILE NUMBER
E128662/E230531
RoHS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ250AE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 250V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 250V 5% UNIDIR SMBJ |
| SMBJ250CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 250Vr 600W 1.5A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ250CAE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 250V, ? 5%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 250V 5% BIDIR SMBJ |
| SMBJ250CATR | 功能描述:TVS DIODE 250VWM 405VC SMB 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:在售 类型:齐纳 双向通道:1 电压 - 反向关态（典型值）:250V 电压 - 击穿（最小值）:279V 电压 - 箝位（最大值）@ Ipp:405V 电流 - 峰值脉冲（10/1000μs）:1.5A 功率 - 峰值脉冲:600W 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMB（DO-214AA） 标准包装:1 |
| SMBJ250CE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 250V, ? 10%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 250VWM SMBJ |
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