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参数资料
| 型号： | SMBJ26A |
| 厂商： | Bourns Inc. |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | DIODE TVS 26V 600W UNI 5% SMD |
| 产品目录绘图： | SMAJ,SMBJ Series SMBJ Series Footprint |
| 特色产品： | SMAJ/SMBJ/SMCJ/SMLJ - Discrete TVS Diodes |
| 标准包装： | 1 |
| 系列： | SMBJ |
| 电压 - 反向隔离（标准值）： | 26V |
| 电压 - 击穿： | 28.9V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | SMB |
| 包装： | 标准包装 |
| 产品目录页面： | 2377 (CN2011-ZH PDF) |
| 其它名称： | SMBJ26ABDKR SMBJ26ADKR SMBJ26ADKR-ND |
Features
■ RoHS compliant*
■ Surface Mount SMB package
■ Standoff Voltage: 5 to 495 volts
Applications
■ IEC 61000-4-2 ESD (Min. Level 4)
■ IEC 61000-4-4 EFT
■ IEC 61000-4-5 Surge
■ Power Dissipation: 600 watts
SMBJ Transient Voltage Suppressor Diode Series
General Information
The markets of portable communications, computing and video equipment are challenging the semiconductor industry to develop
increasingly smaller electronic components.
Bourns offers Transient Voltage Suppressor Diodes for surge and ESD protection applications, in compact chip package DO-214AA (SMB)
size format. The Transient Voltage Suppressor series offers a choice of Working Peak Reverse Voltage from 5 V up to 495 V and Breakdown
Voltage up to 550 V. Typical fast response times are less than 1.0 ns for unidirectional devices and less than 5.0 ns for bidirectional devices
from 0 V to Minimum Breakdown Voltage.
Bourns ? Chip Diodes conform to JEDEC standards, are easy to handle with standard pick and place equipment and the ?at con?guration
minimizes roll away.
Electrical Characteristics (@ T A = 25 °C Unless Otherwise Noted)
Parameter
Minimum Peak Pulse Power Dissipation (TP = 1 ms) (Note 1,2)
Symbol
P PK
Value
600
Unit
Watts
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
Steady State Power Dissipation @ TL = 75 °C
Maximum Instantaneous Forward Voltage @ I PP = 50 A
(For Unidirectional Units Only)
Operating Temperature Range
Storage Temperature Range
I FSM
P M(AV)
V F
T J
T STG
100
5.0
(Note 5)
-55 to +150
-55 to +175
Amps
Watts
Volts
°C
°C
1.
2.
3.
4.
5.
Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
Thermal Resistance Junction to Lead.
8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.
V F = 3.5 V on SMBJ5.0A through SMBJ90A and V F = 5.0 V on SMBJ100A through SMBJ495A.
How to Order
Package
SMBJ = SMB/DO-214AA
Working Peak Reverse Voltage
5.0 = 5.0 VRWM (Volts)
SMBJ 5.0 CA
Asia-Paci?c:
Tel: +886-2 2562-4117
Fax: +886-2 2562-4116
Suf?x
A = 5 % Tolerance Unidirectional Device
CA = 5 % Tolerance Bidirectional Device
Europe:
Tel: +41-41 768 5555
Fax: +41-41 768 5510
The Americas:
Tel: +1-951 781-5500
Fax: +1-951 781-5700
www.bourns.com
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.
Speci?cations are subject to change without notice.
Customers should verify actual device performance in their speci?c applications.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ26A R4 | 功能描述:TVS 二极管 - 瞬态电压抑制器 26V 600W 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ26A | 制造商:Littelfuse 功能描述:TVS DIODE 600W 26V DO-214AA |
| SMBJ26A/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 26V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ26A/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 26V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ26A/2B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 26V 5% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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