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参数资料
| 型号： | SMBJ2K3.3 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | TRANSIENT VOLTAGE SUPPRESSOR |
| 中文描述： | 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 1/1页 |
| 文件大小： | 150K |
| 代理商： | SMBJ2K3.3 |
MSC0977.PDF
ISO 9001 CERTIFIED
REV E 11/23/98
8700 E. Thomas Road
Scottsdale, AZ 85251
Tel: (480) 941-6300
Fax: (480) 947-1503
DESCRIPTION
SMBJ surface mount package is utilized where power and space is a requirement.
Designed for effective protection of power bus lines from voltage spikes originating
from ESD, line noise (EFT), and induced lighting defined by IEC 1000-4-2, 1000-
4-4, and 1000-4-5 respectively. Advanced technology provides lowest clamping
voltage with surface mount packaging minimizing parasitic inductance.
FEATURES
2000 watts Peak Pulse Power 8/20
μ
s
For surface Mount Applications (flat handling surface for accurate placement).
Voltage and reverse leakage lowest available
High surge capacity provides transient protection for low voltage circuits
UL 94V-0 Flammability Classification
MECHANICAL CHARACTERISTICS
CASE: DO-214AA (SMBJ) outline
Terminals solderable per MIL-STD-750, Method 2026
Maximum temperature for soldering: 260
°
C for 10 seconds maximum
LEAD MATERIAL: Copper
LEAD FINISH: Tin plate
POLARITY: Cathode end is banded
WEIGHT: 0.2 grams
MOUNTING POSITION: Any
MAXIMUM RATINGS
Operating Temperature: -55
°
C to +150
°
C
Storage Temperature: -55
°
C to +150
°
C
Steady state Power Dissipation: 3.0 watt @ T
L
≤
75
°
C
Repetition rate (duty cycle): .01%
Surge Power: 300 watts @ 10/1000
μ
s or 2000 watts @ 8/20
μ
s
I
PP
and V
C
below are @ 8/20
μ
s
Electrical Characteristics
@ 25
°
C unless otherwise specified
Peak Pulse Power vs. Pulse Time
8X20 Pulse Wave Form
SMBJ2K3.0
thru
SMBJ2K5.0
TRANSIENT VOLTAGE SUPPRESSOR
DIMENSIONS IN INCHES
A
.077
.083
.180
DIMENSIONS IN MILLIMETERS
MIN
MAX
2.10
4.57
3.94
MIN
MAX
1.96
B
.160
4.06
C
.130
.155
3.30
D
.205
.220
5.21
5.59
E
.075
.095
1.90
2.41
F
.030
.060
0.760
1.520
G
.004
.008
.101
TYPE
SMBJ
V
MIN
VOLTS
I
(BR)
mA
V
WM
VOLTS
I
P
μA
I
PP
A
V
C
VOLTS
α
V(BR)
%oC
2K3.0
4.3
50
3.0
1500
10
5.4
+0/-.05
2K3.3
4.6
50
3.3
700
10
5.8
±.025
2K4.0
5.0
50
4.0
400
10
6.3
±.030
2K4.5
5.4
50
4.5
50
10
6.6
±.040
2K5.0
5.9
50
5.0
5
10
7.6
±.050
相关PDF资料 |
PDF描述 |
|---|---|
| SMBJ2K5.0 | Silver Mica Capacitor; Capacitance:3000pF; Capacitance Tolerance:+/- 1%; Series:CD19; Voltage Rating:500VDC; Capacitor Dielectric Material:Mica; Termination:Radial Leaded; Lead Pitch:8.7mm; Leaded Process Compatible:No RoHS Compliant: No |
| SMBJ5226 | Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?·￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????) |
| SMBJ5246 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| SMBJ5247 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| SMBJ5248 | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ2K5.0 | 制造商:Microsemi Corporation 功能描述:TRANSIENT VOLTAGE SUPPRESSOR DO-214AA SD - Bulk |
| SMBJ30 | 功能描述:TVS 二极管 - 瞬态电压抑制器 30Vr 600W 12.4A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ30/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 30V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ30/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 30V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ30/2 | 制造商:Vishay Semiconductors 功能描述:DIODE TVS SMB 600W 30V |
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