参数资料
型号: SMBJ2K4.5E3TR
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: 参考电压二极管
英文描述: 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
封装: ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN
文件页数: 2/3页
文件大小: 168K
代理商: SMBJ2K4.5E3TR
UNIDIRECTIONAL LOW VOLTAGE
SURFACE MOUNT TRANSIENT
VOLTAGE SUPPRESSOR
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMBJ2K3.0 thru SMBJ2K5.0, e3
SMBG2K3.0 thru SMBG2K5.0, e3
SMBG
&J2
K
3.0-5.0
ELECTRICAL CHARACTERISTICS
BREAKDOWN VOLTAGE
Minimum
V(BR)
BREAKDOWN
CURRENT
I(BR)
RATED
STANDOFF
VOLTAGE
VWM
MAX
STANDBY
CURRENT
ID @ VWM
MAX
CLAMPING
VOLTAGE
VC @ IPP
PEAK PULSE
CURRENT
IPP
TEMPERATURE
COEFFICIANT
of
V(BR)
αV(BR)
MICROSEMI
PART
NUMBER
(add SMBJ or
SMBG prefix)
V
mA
V
μA
V
A
% /
oC
2K3.0
2K3.3
2K4.0
2K4.5
2K5.0
4.3
4.6
5.0
5.4
5.9
50
3.0
3.3
4.0
4.5
5.0
1500
700
400
50
5
5.4
5.8
6.3
6.6
7.6
10
+0/-0.05
±0.025
±0.030
±0.040
+0.050
SYMBOLS & DEFINITIONS
Symbol
Definition
Symbol
Definition
VWM
Working Peak (Standoff) Voltage
IPP
Peak Pulse Current
PPP
Peak Pulse Power
VC
Clamping Voltage
V(BR)
Breakdown Voltage
I(BR)
Breakdown Current for V(BR)
ID
Standby Current
GRAPHS
P
PP
Peak
Pulse
Power
kW
tw – Pulse Width -
μs
Test waveform parmeters: tr=8
μs, tp=20 μs
FIGURE 1
FIGURE 2
Peak Pulse Power vs. Pulse Time
Pulse Waveform for
8/20 s Exponential Surge
Microsemi
Scottsdale Division
Page 2
Copyright
2007
6-21-2007 REV G
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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相关代理商/技术参数
参数描述
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