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参数资料
| 型号： | SMBJ300A |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 139K |
| 代理商： | SMBJ300A |
25
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Transient Voltage Suppression Diodes
Revision: January 09, 2009
SMBJ Series
Surface Mount – 600W > SMBJ series
Please refer to http://www.Littelfuse.com/series/SMBJ.html for current information.
SMBJ
S
eries
Ratings and Characteristic Curves (T
A=25°C unless otherwise noted)
0.1
1
10
100
0.000001
0.00001
0.0001
0.001
t
d-Pulse Width (sec.)
0.2x0.2" (5.0x5.0mm)
Copper Pad Area
P
PPM
-Peak
Pulse
Power
(kW)
I PPM
-P
eak
P
ulse
Cur
rent,
%
I
RSM
0
50
100
150
1.0
2.0
3.0
4.0
tr=10μsec
Peak Value
IPPM
2
TJ=25°C
Pulse Width(td) is dened
as the point where the peak
current decays to 50% of IPPM
10/1000μsec. Waveform
as dened by R.E.A
td
t-Time (ms)
Half Value
IPPM
( )
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage
%
T
A - Ambient Temperature (C)
1
10
100
1000
10000
1.0
10.0
100.0
1000.0
C
j(
pF)
Tj=25C
f=1.0MHz
Vsig=50mVp-p
Uni-directional V=0V
Bi-directional V=0V
V
BR - Reverse Breakdown Voltage (V)
Uni-directional @V
R
Bi-directional @V
R
0
1
2
3
4
5
6
0
25
50
75
100
125
150
175
P
M(A
V)
,Steady
State
Power
Dissipation
(W)
T
A - Ambient Temperature (C)
Figure 1 - Peak Pulse Power Rating
Figure 2 - Pulse Derating Curve
Figure 3 - Pulse Waveform
Figure 4 - Typical Junction Capacitance
Figure 5 - Steady State Power Dissipation Derating Curve
0
20
40
60
80
100
120
1
10
100
Number of Cycles at 60 Hz
I FSM
-
Peak
Forward
Surge
Current
(A)
Figure 6 - Maximum Non-Repetitive Peak Forward
Surge Current Uni-Directional Only
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| SMBJ160CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ300AE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 300V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 300V 5% UNIDIR SMBJ |
| SMBJ300C | 功能描述:TVS 二极管 - 瞬态电压抑制器 300Vr 600W 1.3A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ300CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 300Vr 600W 1.3A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ300CAE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 300V, ? 5%, BI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 300V 5% BIDIR SMBJ |
| SMBJ300CATR | 功能描述:TVS DIODE 300VWM 486VC SMB 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:在售 类型:齐纳 双向通道:1 电压 - 反向关态（典型值）:300V 电压 - 击穿（最小值）:335V 电压 - 箝位（最大值）@ Ipp:486V 电流 - 峰值脉冲（10/1000μs）:1.3A 功率 - 峰值脉冲:600W 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMB（DO-214AA） 标准包装:1 |
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