- 您现在的位置：买卖IC网 > PDF目录85406 > SMBJ33A/2B (VISHAY SEMICONDUCTORS) 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA PDF资料下载
参数资料
| 型号： | SMBJ33A/2B |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC, SMB, 2 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 111K |
| 代理商： | SMBJ33A/2B |
SMBJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
0
25
50
75
100
0
75
25
50
100
125
150
175
200
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
TA — Ambient Temperature (°C)
Fig. 2 – Pulse Derating Curve
P
PPM
—
Peak
Pulse
Power
(kW)
Fig. 1 – Peak Pulse Power Rating Curve
0.1
1
10
100
0.1s
1.0s10s
td — Pulse Width (sec.)
100s
1.0ms
10ms
0.2 x 0.2" (0.5 x 0.5mm)
Copper Pad Areas
Fig. 6 – Maximum Non-Repetitive Peak
Forward Surge Current
Number of Cycles at 60HZ
10
200
100
110
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
Unidirectional Only
I FSM
—
Peak
Forward
Surge
Current
(A)
tp — Pulse Duration (sec)
T
ransient
Thermal
Impedance
(
°C/W)
Fig. 5 – Typical Transient Thermal
Impedance
0.1
1.0
10
100
0.001
0.01
0.1
1
10
100
1000
0
50
100
150
I PPM
—
Peak
Pulse
Current,
%
I
RSM
Fig. 3 – Pulse Waveform
TJ = 25°C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50% of IPPM
tr = 10sec.
Peak Value
IPPM
Half Value — IPP
IPPM
2
td
10/1000sec. Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t — Time (ms)
C
J—
Junction
Capacitance
(pF)
Fig. 4 – Typical Junction Capacitance
10
100
1,000
6,000
10
1
100
200
VWM — Reverse Stand-Off Voltage (V)
TJ = 25°C
f = 1.0MHz
Vsig = 50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
Measured at
Zero Bias
Uni-Directional
Bi-Directional
www.vishay.com
Document Number 88392
4
19-Apr-04
相关PDF资料 |
PDF描述 |
|---|---|
| SMBJ5.0A/2B | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SRP300D-E3/73 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD |
| SA10CHE3/54 | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| SA13CHE3/54 | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
| SA30CAHE3/54 | 500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ33A-7 | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ33A-7P | 功能描述:TVS 二极管 - 瞬态电压抑制器 33V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ33A-CUT TAPE | 制造商:FAIRCHILD 功能描述:SMBJ33 Series 53.3 V 600 W Transient Voltage Suppressor - DO-214AA 制造商:LITTELFUSE 功能描述:SMBJ Series 53.3 V 0.6 kW Surface Mount Uni-Directional TVS Diode - DO-214AA |
| SMBJ33AE3 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 33V 600W 2PIN DO-214AA - Bulk |
| SMBJ33A-E3 | 制造商:Vishay Intertechnologies 功能描述:Diode,TVS,SMBJ33A-E3 |
发布紧急采购，3分钟左右您将得到回复。