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参数资料
| 型号： | SMBJ350A |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 139K |
| 代理商： | SMBJ350A |
26
Transient Voltage Suppression Diodes
Revision: January 09, 2009
2009 Littelfuse, Inc.
Specications are subject to change without notice.
Surface Mount – 600W > SMBJ series
SMBJ Series
Please refer to http://www.Littelfuse.com/series/SMBJ.html for current information.
Physical Specications
Weight
0.003 ounce, 0.093 grams
Case
JEDEC DO214AA. Molded plastic body
over glass passivated junction
Polarity
Color band denotes cathode except
Bidirectional
Terminal
Matte Tin-plated leads, Solderable per
JESD22-B102D
Environmental Specications
Temperature Cycle
JESD22-A104
Pressure Cooker
JESD 22-A102
High Temp. Storage
JESD22-A103
HTRB
JESD22-A108
Thermal Shock
JESD22-A106
Soldering Parameters
T
e
mperature
(T
)
Time (t)
T
s(min)
T
s(max)
T
L
T
P
t
s
Preheat
t
L
t
p
Ramp-up
Critical Zone
T
L
to T
P
Ramp-down
t 25C to Peak
25C
Reow Condition
Pre Heat
-Temperature Min (T
s(min))
150°C
-Temperature Max (T
s(max))
200°C
-Time (min to max) (t
s)
Average ramp up rate (LiquidusTemp
(T
L) to peak
3°C/second max
T
S(max) to TL - Ramp-up Rate
3°C/second max
Reow
-Temperature (T
L) (Liquidus)
217°C
-Time (min to max) (t
s)
PeakTemperature (T
P)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (t
p)
Ramp-down Rate
6°C/second max
Time 25°C to peakTemperature (T
P)
8 minutes Max.
Do not exceed
280°C
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| SMBJ58A | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
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| SMBJ220CA | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ350A-13-F | 功能描述:MOSFET Transient Voltage Su SMB T&R 3K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SMBJ350AE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 350V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 350V 5% UNIDIR SMBJ |
| SMBJ350C | 功能描述:TVS 二极管 - 瞬态电压抑制器 350Vr 600W 1.1A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ350CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 350Vr 600W 1.1A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ350CA | 制造商:Littelfuse 功能描述:TVS DIODE 600W 350V DO-214AA |
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