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参数资料
| 型号： | SMBJ36A-W |
| 厂商： | RECTRON LTD |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 35K |
| 代理商： | SMBJ36A-W |
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified.
TVS
TFMBJ
SERIES
DO-214AA
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
SURFACE MOUNT GPP
GPP TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25
oC unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
2002-12
Ratings at 25
oC ambient temperature unless otherwise specified.
3. Lead temperature at TL = 25
oC
NOTES :
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25
oC per Fig.2.
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. VF = 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and VF = 5.0V on TFMBJ-100 thru TFMBJ-170 devices.
RATINGS
Steady State Power Dissipation at TL = 75
oC (Note 2)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
SYMBOL
IFSM
VF
TJ, TSTG
Volts
-55 to + 150
0 C
UNITS
Amps
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Minimum 600
100
SEE NOTE 4
VALUE
Operating and Storage Temperature Range
PPPM
Watts
IPPM
Amps
SEE TABLE 1
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
PM(AV)
5.0
Watts
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.220 (5.59)
0.205 (5.21)
0.030 (0.76)
0.060 (1.52)
0.084 (2.13)
0.096 (2.44)
0.160 (4.06)
0.180 (4.57)
0.130 (3.30)
0.155 (3.94)
0.083 (2.11)
0.077 (1.96)
相关PDF资料 |
PDF描述 |
|---|---|
| SMBJ7.5-W | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ9.0 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ10A-W | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ28CA-W | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ90-W | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ36C | 功能描述:TVS 二极管 - 瞬态电压抑制器 36Vr 600W 10.4A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ36C/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ36C/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ36C/2B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ36C/5 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 36V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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