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| 型号： | SMBJ3EZ10D1 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 0K |
| 代理商： | SMBJ3EZ10D1 |
Silicon 3 Watt Zener Diode
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright
2003
7-21-2003 REV A
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SCOTTSD A L E DIVISION
3EZ3.9D5 thru 3EZ200D5
3EZ3.9D5
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3EZ200
D5
DESCRIPTION
APPEARANCE
The 3EZ3.9D5 thru 3EZ200D5 series of axial-leaded 3.0 watt Zeners
provides voltage regulation selections with 5% tolerances from 3.9 to 200
volts in a DO-41 plastic package size. Other Zener voltage tolerances are
also available by changing the suffix number to the tolerance desired such
as 1, 2 3, or 4 for tighter tolerances or 10 for wider tolerance. These plastic
encapsulated Zeners have moisture classification of Level 1 with no dry
pack required and are also available in various military equivalent
screening levels by adding a prefix identifier as also described in the
Features section. They may be operated at high maximum dc currents or
full power rating with adequate heat. Microsemi also offers numerous other
Zener products to meet higher and lower power applications.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Zener voltage available 3.9 V to 200 V
Standard voltage tolerances are plus/minus 5%
with a 5 suffix and 10 % with 10 suffix
identification
Tight tolerances available in plus or minus 4%,
3%, 2% or 1% with 4, 3, 2, or 1 suffix respectively
Options for screening in accordance with MIL-
PRF-19500 for JAN, JANTX, JANTXV, and JANS
are available by adding MQ, MX, MV, or MSP
prefixes respectively to part numbers.
Surface mount equivalents available as
SMBJ3EZ3.9D5 to SMBJ3EZ200D5 in the DO-
214AA package, or SMBG3EZ3.9D5 to
SMBG3EZ200D5 in the DO-215AA package
Regulates voltage over a broad operating current and
temperature range
3 W capability in relatively small DO-41 package size
when adequately heat sunk (see Figure 1)
Wide selection from 3.9 to 200 V
Flexible axial-lead mounting terminals
Nonsensitive to ESD per MIL-STD-750 Method 1020
Withstands surge stresses
High specified maximum current (IZM) when
adequately heat sunk
Moisture classification is Level 1 per IPC/JEDEC
J-STD-020B with no dry pack required
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Power dissipation at 25
C: 3.0 watts (also see
derating in Figure 1).
Operating and Storage temperature: -65
C to +150C
Thermal Resistance: 40
C/W junction to lead at 3/8
(10 mm) lead length from body, or 100
C/W junction
to ambient when mounted on FR4 PC board (1oz Cu)
with 4 mm
2 copper pads and track width 1 mm, length
25 mm
Steady-State Power: 3 watts at TL < 30
oC 3/8 inch
(10 mm) from body, or 1.25 watts at TA = 25
C when
mounted on FR4 PC described for thermal resistance
(also see Figure 1)
Forward voltage @200 mA: 1.2 volts (maximum)
Solder Temperatures: 260
C for 10 s (max)
CASE: Void-free transfer molded thermosetting
epoxy body meeting UL94V-0
TERMINALS: Leads, tin-lead plated solderable per
MIL-STD-750, method 2026
POLARITY: Cathode indicated by band where diode
is to be operated with the banded end positive with
respect to the opposite end for Zener regulation
MARKING: Part number
TAPE & REEL option: Standard per EIA-296 (add
“TR” suffix to part number)
WEIGHT: 0.4 grams
See package dimensions on last page
DO-41 or
DO-204AL
(Plastic)
相关PDF资料 |
PDF描述 |
|---|---|
| SMBJ3EZ10D2 | 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| SMBJ3EZ10D4TR | 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| SMBJ3EZ10D4 | 10 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| SMBJ3EZ110D10 | 110 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| SMBJ3EZ110D5TR | 110 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ3V3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ3V3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ3V3/5B | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ3V3-E3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ3V3-E3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 3.3V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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