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参数资料
| 型号： | SMBJ40AT3 |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 文件页数： | 1/2页 |
| 文件大小： | 41K |
| 代理商： | SMBJ40AT3 |
All products are sold to the commercial specifications shown for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
12
Figure 1 - Capacitance
1
10
100
1000
10000
10
100
1000
Device Stand-off Voltage - Volts
@ Stand-off Voltage
Pico-
farads
Figure 2 - Pad Size
2.16
2.26
2.74
2.16
SMB
Solder Pads
(all dimensions in mm)
Voltage
5% Voltage Tolerance
Packing Option
T1 = Taped (500 pcs)
T3 = Taped (3000 pcs)
Bi Directional
SMBJ
A
C
ORDERING INFORMATION
2.0
5.21/5.59
0.102
0.203
Seating
Plane
4.06/4.57
3.30 -
3.94
2.18/
2.44
SMBJ5.0 - SMBJ188CA
SMBJ5.0 - SMBJ188CA series
0.76/
1.27
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSORS
Protect sensitive electronics against voltage transients induced by electro-static
discharge (ESD), inductive load switching, and lightning. Ideal for the
protection of I/O interfaces, Vcc bus and other integrated circuits.
FEATURES
Stand-off Voltage Range 5.0 to 188 Volts
Uni-directional and Bi-directional
Glass Passivated Junction
Jedec package designed to meet SM assembly needs
Low lead inductance
Each device 100% surge tested
UL Recognized
MAXIMUM RATINGS
Peak Pulse Power (Ppk) 600 Watts (10 X 1000s)
(see diagram on page 6 for wave form)
1.5 Watt Steady State
Response time: 1 X 10-12 secs (theoretical)
Forward surge rating: 100A, 8.3 ms single half sine-wave
(Uni-directional only)
Operating & storage Temp.: -55°C to +150°C
MECHANICAL DATA
CASE: D0214AA moulded plastic over glass
pasivated junction UL94V(O) (Thermoset) Epoxy.
Terminals: Solder plated solderable per MIL-STD-750
Method 2026
Solderable leads: 230°C for 10 seconds.
Marking: cathode band(positive terminal, uni-directional
devices only), device code, logo
Weight: 0.093 gram (approx.)
Figure 3 - Peak Pulse Power vs. Pulse Time
1
s
100w
500w
5kw
20kw
2kw
100kw
10
s
10 ms
100
s1ms
Pulse Time (tp)
p
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| SMBJ78CAT3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ78T1 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ188CT1 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| SMBJ110AT1 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ40A-TP | 功能描述:TVS 二极管 - 瞬态电压抑制器 40V 600 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40ATR | 功能描述:TVS DIODE 40VWM 64.5VC SMB 制造商:smc diode solutions 系列:- 包装:剪切带（CT） 零件状态:在售 类型:齐纳 单向通道:1 电压 - 反向关态（典型值）:40V 电压 - 击穿（最小值）:44.4V 电压 - 箝位（最大值）@ Ipp:64.5V 电流 - 峰值脉冲（10/1000μs）:9.3A 功率 - 峰值脉冲:600W 电源线路保护:无 应用:通用 不同频率时的电容:- 工作温度:-55°C ~ 150°C（TJ） 安装类型:表面贴装 封装/外壳:DO-214AA，SMB 供应商器件封装:SMB（DO-214AA） 标准包装:1 |
| SMBJ40A-TR | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 40V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40C | 功能描述:TVS 二极管 - 瞬态电压抑制器 40Vr 600W 9.3A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ40C/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 40V 10% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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