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参数资料
| 型号： | SMBJ43HE3/5B |
| 厂商： | Vishay General Semiconductor |
| 文件页数： | 3/5页 |
| 文件大小： | 0K |
| 描述： | TVS UNIDIR 600W 43V 10% SMB |
| 标准包装： | 3,200 |
| 系列： | TransZorb® |
| 电压 - 反向隔离（标准值）： | 43V |
| 电压 - 击穿： | 47.8V |
| 功率（瓦特）： | 600W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | DO-214AA（SMB） |
| 包装： | 带卷 (TR) |
SMBJ5.0A thru SMBJ188A
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (T A = 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to ambient (1)
Typical thermal resistance, junction to lead
SYMBOL
R ? JA
R ? JL
VALUE
100
20
UNIT
°C/ W
Note
(1) Mounted on minimum recommended pad layout
ORDERING INFORMATION (Example)
PREFERRED P/N
SMBJ5.0A-E3/52
SMBJ5.0A-E3/5B
SMBJ5.0AHE3/52 (1)
SMBJ5.0AHE3/5B (1)
UNIT WEIGHT (g)
0.096
0.096
0.096
0.096
PREFERRED PACKAGE CODE
52
5B
52
5B
BASE QUANTITY
750
3200
750
3200
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (T A = 25 °C unless otherwise noted)
100
150
t r = 10 μs
T J = 25 °C
P u lse W idth (t d )
is defined as the Point
10
100
Peak Val u e
I PPM
w here the Peak C u rrent
decays to 50 % of I PPM
Half Val u e - I PP
I PPM
2
1
0.1
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
50
0
t d
10/1000 μs W a v eform
as defined by R.E.A.
0.1 μs
1.0 μs
10 μs
100 μs
1.0 ms
10 ms
0
1.0
2.0
3.0
4.0
100
75
50
t d - P u lse W idth (s)
Fig. 1 - Peak Pulse Power Rating Curve
6000
1000
t - Time (ms)
Fig. 3 - Pulse Waveform
Meas u red at
Zero Bias
25
100
V R , Meas u red at Stand-Off
Voltage V W M
Uni-Directional
Bi-Directional
T J = 25 °C
f = 1.0 MHz
V sig = 50 mV P-P
0
10
0
25
50
75
100
125
150
175
200
1
10
100
200
T J - Initial Temperat u re (°C)
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
V W M - Re v erse Stand-Off Voltage (V)
Fig. 4 - Typical Junction Capacitance
Revision: 26-Jul-12
3
Document Number: 88392
For technical questions within your region: DiodesAmericas@vishay.com , DiodesAsia@vishay.com , DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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相关代理商/技术参数 |
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| SMBJ440 | 功能描述:TVS 二极管 - 瞬态电压抑制器 440Vr 600W 0.9A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ440A | 功能描述:TVS 二极管 - 瞬态电压抑制器 440Vr 600W 0.9A 5% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ440AE3/TR13 | 制造商:Microsemi Corporation 功能描述:600W, STAND-OFF VOLTAGE = 440V, ? 5%, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS 600W 440V 5% UNIDIR SMBJ |
| SMBJ440C | 功能描述:TVS 二极管 - 瞬态电压抑制器 440Vr 600W 0.9A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ440CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 440Vr 600W 0.9A 5% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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