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参数资料
| 型号： | SMBJ51C-HE3/52 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 107K |
| 代理商： | SMBJ51C-HE3/52 |
www.vishay.com
4
Document Number 88392
08-Sep-06
Vishay General Semiconductor
SMBJ5.0 thru SMBJ188CA
Note:
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient (1)
RθJA
100
°C/W
Typical thermal resistance, junction to lead
RθJL
20
°C/W
ORDERING INFORMATION
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ5.0A-E3/52
0.096
52
750
7" Diameter Plastic Tape & Reel
SMBJ5.0A-E3/5B
0.096
5B
3200
13" Diameter Plastic Tape & Reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current versus Initial Junction Temperature
0.1
1
10
100
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0.2 x 0.2" (0.5 x 0.5 mm)
Copper Pad Areas
P
PPM
,P
e
ak
P
u
lse
P
o
w
er
(k
W
)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Pe
a
k
P
u
lse
P
o
w
er
(P
PP
)or
C
u
rrent
(I
PP
)
Der
ating
in
P
e
rcentage
,
%
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
td
0
1.0
2.0
3.0
4.0
IPPM
-
P
e
ak
P
u
lse
C
u
rrent,
%
I
RSM
t - Time (ms)
tr = 10 sec
Peak Value
IPPM
Half Value -
IPPM
IPP
2
10/1000 sec Waveform
as defined by R.E.A.
Tj = 25 °C
Pulse Width (td)
is defined as the point
where the peak current
decays to 50 % of IPPM
10
100
1000
6000
10
1
100
200
Uni-Directional
Bi-Directional
C
J,
J
u
nction
Capacitance
(pF)
VWM - Reverse Stand-off Voltage (V)
Tj = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Measured at
Zero Bias
VR, Measured at Stand-off
Voltage VWM
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相关代理商/技术参数 |
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| SMBJ51E3 | 制造商:Microsemi Corporation 功能描述:TVS SGL UNI-DIR 51V 600W 2PIN DO-214AA - Bulk |
| SMBJ51-E3/2C | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ51-E3/51 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ51-E3/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ51-E3/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 51V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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