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参数资料
| 型号： | SMBJ5388C |
| 厂商： | MICRO COMMERCIAL COMPONENTS |
| 元件分类： | 齐纳二极管 |
| 英文描述： | 200 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA |
| 封装： | SMBJ, 2 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 1235K |
| 代理商： | SMBJ5388C |
SMBJ5333B
THRU
SMBJ5388B
Features
Low profile package for surface mounting (flat handling
surface for accurate placement)
Zener Voltage 3.3V to 200V
High Surge Current Capability
For available tolerances – see note 1
Available on Tape and Reel (see EIA std RS-481)
Mechanical Data
Standard JEDEC outlines as shown
Terminals gull-wing or c-bend (modified J-bend) tin-lead plated
and solderable per MIL-STD-750, method 2026
Polarity is indicated by cathode band
Maximum temperature for soldering: 260
oC for 10 seconds.
Maximum Ratings @ 25
oC Unless Otherwise Specified
Forward Voltage at 1.0A
Current
VF
1.2 Volts
Steady State Power
Dissipation
P(AV)
5 Watts
See note 2
Operating and Storage
Temperatures
TJ, TSTG
-55
oC to
+ 150
oC
Thermal Resistance
RθJL
25
oC/W
5 Watt
Surface Mount
Silicon
Zener Diodes
Notes
1. Mounted on copper pads as shown below.
2.
Lead temperature at 25
oC = TL at mounting plane. Derate
linearly above 25
oC to zero power at 150 oC
www.mccsemi.com
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.078
.116
1.98
2.95
B
.075
.089
1.90
2.25
C
.002
.008
.05
.20
D
-----
.02
-----
.51
E
.035
.055
.90
1.40
F
.065
.091
1.65
2.32
G
.205
.224
5.21
5.69
H
.160
.180
4.06
4.57
J
.130
.155
3.30
3.94
DO-214AA
(SMBJ) (Round Lead)
H
J
E
F
G
A
B
D
C
Cathode Band
0.070”
0.090"
0.085”
Modified J Bend
PAD LAYOUT
omponents
21201 Itasca Street Chatsworth
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MCC
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相关代理商/技术参数 |
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|---|---|
| SMBJ5388C/TR13 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 200V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5W 200V 2% SMBJ |
| SMBJ5388CE3/TR13 | 制造商:Microsemi Corporation 功能描述:5.0W, VZ = 200V, ? 2% - Tape and Reel 制造商:Microsemi Corporation 功能描述:DIODE ZENER 5W 200V 2% SMBJ |
| SMBJ54 | 功能描述:TVS 二极管 - 瞬态电压抑制器 54Vr 600W 6.9A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ54/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 54V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ54/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 54V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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