参数资料
| 型号： | SMBJ5V0CA |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | TVS BIDIRECT 600W 5V SMB |
| 标准包装： | 1 |
| 系列： | SMBJ |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.4V |
| 功率（瓦特）： | 600W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AA，SMB |
| 供应商设备封装： | DO-214AA（SMB） |
| 包装： | 标准包装 |
| 产品目录页面： | 1614 (CN2011-ZH PDF) |
| 其它名称： | SMBJ5V0CADKR |
December 2013
SMBJ5V0(C)A - SMBJ170(C)A
600 Watt Transient Voltage Suppressors
Features
? Glass-Passivated Junction
? 600 W Peak Pulse Power Capability
on 10/1000 μ s Waveform.
? Excellent Clamping Capability
? Low-Incremental Surge Resistance
? Fast Response Time: Typically Less than 1.0 ps
from 0 V to BV for Unidirectional and 5.0 ns for Bidirectional
? Typical I R Less than 1.0 μ A Above 10 V
SMB/DO-214AA
COLOR BAND DENOTES CATHODE
ON UNIDIRECTIONAL DEVICES ONLY.
NO COLOR BAND ON BIDIRECTIONAL
DEVICES.
? UL Certificate #E258596
? Devices for Bipolar Applications
? Bidirectional Types Use CA Suffix
? Electrical Characteristics Apply in Both Directions
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted.
Symbol
P PPM
I PPM
I FSM
T STG
T J
Parameter
Peak Pulse Power Dissipation on 10/1000 μ s Waveform
Peak Pulse Current on 10/1000 μ s Waveform
Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method) (1)
Storage Temperature Range
Operating Junction Temperature Range
Value
600
See Table
100
-55 to 150
-55 to 150
Unit
W
A
A
° C
° C
Note:
1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum.
? 2002 Fairchild Semiconductor Corporation
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.0
1
www.fairchildsemi.com
相关PDF资料 |
PDF描述 |
|---|---|
| SFML-150-01-S-D | CONN RECPT 100POS 1.27MM GLD PCB |
| AD8619ARZ | IC OPAMP GP R-R CMOS QUAD 14SOIC |
| P6SMB100AT3G | TVS ZENER UNIDIR 600W 100V SMB |
| 1SMB100AT3G | TVS 600W 100V UNIDIRECT SMB |
| 68046-333LF | CONN RCPT 66POS .100" DBL SMD |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ5V0CA_Q | 功能描述:TVS 二极管 - 瞬态电压抑制器 5V 600W SMB Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6.0 | 功能描述:TVS 二极管 - 瞬态电压抑制器 6Vr 600W 58.3A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6.0/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.0V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6.0/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.0V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6.0/5 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 6.0V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
发布紧急采购，3分钟左右您将得到回复。