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参数资料
| 型号： | SMBJ6.5CA |
| 厂商： | RECTRON LTD |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 2/5页 |
| 文件大小： | 35K |
| 代理商： | SMBJ6.5CA |
RECTRON
RATING AND CHARACTERISTIC CURVES ( TFMBJ5.0 THRU TFMBJ170CA )
FIG. 2 - PULSE DERATING CURVE
PEAK
PULSE
POWER
(PPP)
OR
CURRENT
TA, AMBIENT TEMPERATURE,(
)
025
50
75
100
125
150
175
200
100
75
50
25
0
(IPP)
DERATING
IN
PERCENTAGE,%
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
C
J,
CAPACITANCE,
pF
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
6,000
1,000
100
10
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
C
J,
JUNCTION
CAPACITANCE,pF
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
6,000
1,000
100
10
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of IPPM
10/1000usec. Waveform
as Defined by R.E.A.
Peak Value
IPPM
tr = 10usec.
FIG. 3 - PULSE WAVEFORM
IPPM
,PEAK
PULSE
CURRENT,%
t, TIME,mS
0
1.0
2.0
3.0
4.0
50
100
150
HALF VALUE -
IPPM
2
td
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
PPM
,PEAK
PULSE
POWER,
KW
TP, PULSE WIDTH, sec
Non-Repetitive
Pulse Waveform
Shown in Fig.3
TA = 25
0.2X0.2"(5.0X5.0mm)
copper pad areas
100
10
1.0
0.1
0.1uS
1.0uS
10uS
100uS
1.0mS
10mS
BIDIRECTIONAL
IFSM,
PEAK
FORWARD
SURGE
CURRENT
AMPERES
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
NUMBER OF CYCLES AT 60 Hz
200
100
10
1
10
100
8.3ms Single Half Sine-Wave
(JEDED Method)
SURGE CURRENT UNIDIRECTIONAL
Unidirectional only
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ6CAA-TR | 制造商:STMicroelectronics 功能描述: |
| SMBJ6V0A | 功能描述:TVS 二极管 - 瞬态电压抑制器 6V 600W SMB Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6V0A_Q | 功能描述:TVS 二极管 - 瞬态电压抑制器 6V 600W SMB Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6V0CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 6V 600W SMB Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ6V5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 6.5V 600W SMB Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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