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参数资料
| 型号： | SMBJ8.5-M3/52 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMB, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 93K |
| 代理商： | SMBJ8.5-M3/52 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89284
4
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMBJ5.0 thru SMBJ188CA
Vishay General Semiconductor
New Product
Note
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient
RJA (1)
100
°C/W
Typical thermal resistance, junction to lead
RJL
20
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMBJ5.0A-M3/52
0.096
52
750
7" diameter plastic tape and reel
SMBJ5.0A-M3/5B
0.096
5B
3200
13" diameter plastic tape and reel
0.1
1
10
100
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
P
PPM
-
P
eak
Pulse
P
o
w
er
(kW)
td - Pulse Width (s)
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
P
e
ak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
e
rcentage
,%
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
I PPM
-
P
e
ak
Pulse
Current,
%
I
RSM
t - Time (ms)
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 s Waveform
as defined by R.E.A.
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
6000
10
1
100
200
Uni-Directional
Bi-Directional
C
J-
J
unction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVP-P
Measured at
Zero Bias
V
R, Measured at Stand-Off
Voltage V
WM
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ8V0A | 功能描述:TVS 二极管 - 瞬态电压抑制器 8V 600W SMB Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ8V0CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 8V 600W SMB Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ8V5A | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.5V 600W Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ8V5A-TR | 制造商:STMicroelectronics 功能描述: |
| SMBJ8V5CA | 功能描述:TVS 二极管 - 瞬态电压抑制器 8.5V 600W Bidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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