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参数资料
| 型号： | SMBJ90 |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA |
| 封装： | ROHS COMPLIANT, PLASTIC, SMBJ, 2 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 230K |
| 代理商： | SMBJ90 |
Silicon Avalanche Diodes
264
www .littelfuse .com
SMBJ Series
600W Surface Mount Transient Voltage Supressors
Ratings and Characteristic Curves TA=25C unless otherwise noted
Fig. 1 Peak Pulse Power Rating
Fig. 3 Pulse Waveform
Fig. 5- Typ. Transient Thermal Impedance
Fig. 6- Maximum Non-Repetitive Peak
Fig. 4- Typical Junction Capacitance
Fig. 2 Pulse Derating Curve
td- Pulse Width (sec.)
TA- Ambient Temperature (C)
P
PPM
-Peak
Pulse
Power
(KW)
I PPM
-Peak
Pulse
Current,
%
I
RSM
Transient
Thermal
Impedance
(
C/W)
I PSM
-Peak
Forward
Surge
Current
(A)
C
J
-Junction
Capacitance
(pF)
Peak
Pulse
Power
(P
PP
)or
Current
(I
PP
)
Derating
in
Percentage,
%
0.1s
1.0s
10s
100s
1.0ms
10ms
0.1
1
10
100
0.2x0.2"(5.0x5.0mm)
Copper Pad Areas
0
0.1
1.0
10
100
50
100
150
1.0
2.0
3.0
4.0
0.001
0.01
0.1
1
10
100
1000
1
10
100
200
6000
1000
100
10
1.0
10
100
200
10
100
0
25
50
75
100
125 150 175 200
tp- Pulse Duration(sec)
Number of Cycles at 60Hz
VWM-Reverse Stand-Off Voltage (V)
Forward Surge Current
tr=10sec
Peak Value
IPPM
Half Value IPPM
2
TJ=25C
Pulse Width(td) is defined
as the point where the peak
current decays to 50% of IPPM
10/1000sec. Waveform
as defined by R.E.A
td
8.3 Single Half Sine-Wave
(JEDEC Method)
Undirectional Only
Measured at
Zero Bias
Uni-Directional
Bi-Directional
TJ=25C
f=1.0MHZ
Vsig=50mVp-p
VR, Measured at
Stand-Off
Voltage, VWM
RoHS
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMBJ90/1 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ90/2 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ90/5 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ90/52 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMBJ90/55 | 功能描述:TVS 二极管 - 瞬态电压抑制器 600W 90V 10% Uni RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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