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参数资料
| 型号： | SMCG30C-HE3/57T |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 99K |
| 代理商： | SMCG30C-HE3/57T |
Vishay General Semiconductor
SMCG5.0 thru SMCG188CA
Document Number 88457
08-Sep-06
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Transient Thermal Impedance
0.1
1.0
10
100
0.001
0.01
0.1
10
1
100
1000
tp - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
1
10
100
10
100
200
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
Tj = Tj max.
8.3 ms Single Half Sine-Wave
0.280 (7.11)
0.260 (6.60)
0.016 (0.41)
0.006 (0.15)
0.020
(0.51) Max.
0.058 (1.47)
0.038 (0.97)
0.040 (1.02)
0.024 (0.61)
SEATING
PLANE
0.008 (0.20)
0.002 (0.05)
0.245 (6.22)
0.220 (5.59)
0.125 (3.17)
0.115 (2.92)
0.095 (2.41)
0.075 (1.90)
0.050 (1.27)
0.125 (3.17)
0.310 (7.87)
0.400 (10.16)
0.380 (9.64)
DO-215AB (SMCG)
Mounting Pad Layout
Cathode Band
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相关代理商/技术参数 |
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| SMCG33 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT |
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| SMCG33A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCG33A/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCG33A/7T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 33V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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