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参数资料
| 型号： | SMCG45E3TR |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 4/4页 |
| 文件大小： | 198K |
| 代理商： | SMCG45E3TR |
SURFACE MOUNT 1500 Watt
Transient Voltage Suppressor
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCJ5.0 thru SMCJ170CA, e3
and SMCG5.0 thru SMCG170CA, e3
SMC
5.0–170CA,
e3
GRAPHS
Copyright
2009
SA3-43, REV F, 5-24-09
FIGURE 2
– PULSE WAVEFORM
100
10
1.0
0
(Waveform – See Figure 2)
Non-repetitive
(P
PP
)–
Peak
Pul
se
Power
-
kW
Test wave form
parameterxs
tr = 10
μsec.
tp = 1000
μsec.
1
μs
10
μsec
100
μsec
1ms
10ms
tp – Pulse Time – sec
FIGURE 1 –
Peak Pulse Power vs. Pulse Time
PAD LAYOUT
INCHES
mm
A
.390
9.90
B
.110
2.79
C
.150
3.81
INCHES
mm
A
0.510
12.95
B
0.110
2.79
C
0.150
3.81
TL Lead Temperature
oC
FIGURE 4
FIGURE 3 – Derating Curve
T
ypical Capacitance vs.
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMCJ
SMCG
Breakdown Voltage
PACKAGE DIMENSIONS
DO-214AB
DO-215AB
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115 .260 .220 .305 .077 .380
.025
.030
MAX
.121 .280 .245 .320 .104 .400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92 6.60 5.59 7.75 1.95 9.65
0.635 .760
MAX
3.07 7.11 6.22 8.13 2.65 10.16 1.016 1.520
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
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| SMCG48A/51T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 48V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCG48A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 48V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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