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参数资料
| 型号： | SMCG5665AE3/TR13 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 3/3页 |
| 文件大小： | 170K |
| 代理商： | SMCG5665AE3/TR13 |
TRANSIENT VOLTAGE SUPPRESSORS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCG5629 thru SMCG5665A, e3
and SMCJ5629 thru SMCJ5665A, e3
SMCG/J5
629
thru
SMCG/J5
665
A
OUTLINE AND CIRCUIT
Measured at
Stand-off Voltage
Measured at
zero voltage
Peak
Pulse
Power
(P
PP
)in
KW
C:
Ca
p
acita
n
c
e
in
p
ic
o
farads
Exponential wave-
form (See FIG. 2)
Square-wave pulse
Pulse Time (tp)
FIGURE 1 Non-repetitive peak pulse power rating curve.
Note: Peak power defined as peak voltage times peak current.
BV: Breakdown Voltage in Volts
FIGURE 5 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
Microsemi
Scottsdale Division
Page 3
Copyright
2007
6-21-2007 REV D
,e3
FIGURE 2
Pulse wave form for exponential surge
FIGURE 3 Derating curve
Peak
pul
se
pow
er
(P
PP
)or
cur
rent
I
PP
(
s
ur
ge)
in
per
ce
nt
o
f2
5
o C
ra
ting
P
u
lse
cu
rren
t(I
P
)in
p
e
rce
n
tof
I
PP
Stea
dy-
s
tat
e
p
o
w
e
r
dissipatio
n
(
w
atts)
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of I
(surge).
TL – Lead Temperature
oC
FIGURE 4
Steady-state power
derating curve
Time (t) in milliseconds
TA Ambient Temperature
oC
PACKAGE DIMENSIONS
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115
.260
.220
.305
.077
.380
.025
.30
MAX
.121
.280
.245
.320
.104
.400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92
6.60
5.59
7.75
1.95
9.65
0.635
0.760
MAX
3.07
7.11
6.22
8.13
2.65
10.16
1.016
1.520
DO-214AB
DO-215AB
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCG5665E3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 180V, VBRMAX = 220V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 162VWM 287VC DO215AB |
| SMCG58 | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT |
| SMCG58A | 制造商:MICROSEMI 制造商全称:Microsemi Corporation 功能描述:UNIDIRECTIONAL AND BIDIRECTIONAL SURFACE MOUNT |
| SMCG58A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 58V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCG58A/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 58V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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