参数资料
型号: SMCG7.0A-E3/51T
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB
封装: ROHS COMPLIANT, PLASTIC, SMCG, 2 PIN
文件页数: 1/6页
文件大小: 99K
代理商: SMCG7.0A-E3/51T
Vishay General Semiconductor
SMCG5.0 thru SMCG188CA
Document Number 88457
08-Sep-06
www.vishay.com
1
Surface Mount TRANSZORB Transient Voltage Suppressors
FEATURES
Low profile package
Ideal for automated placement
Glass passivated chip junction
Available in Unidirectional and Bidirectional
Excellent clamping capability
Very fast response time
Low incremental surge resistance
Meets MSL level 1, per J-STD-020C, LF max peak
of 260 °C
Solder Dip 260 °C, 40 seconds
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICs, MOSFET, signal lines of sensor units
for consumer, computer, industrial, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-215AB (SMCG)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: For unidirectional types the band denotes
cathode end, no marking on bidirectional types
DO-215AB (SMCG)
DEVICES FOR BIDIRECTION APPLICATIONS
For
bidirectional
devices
use
C
or
CA
suffix
(e.g. SMCG188CA).
Electrical characteristics apply in both directions.
MAJOR RATINGS AND CHARACTERISTICS
VWM
5.0 V to 188 V
PPPM
1500 W
PD
6.5 W
IFSM
200 A
Tj max.
150 °C
Note:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2
(2) Mounted on 0.31 x 0.31" (8.0 x 8.0 mm) copper pads to each terminal
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Peak pulse power dissipation with a 10/1000 s waveform (1,2)
PPPM
Minimum 1500
W
Peak pulse current with a 10/1000 s waveform (1)
IPPM
see next table
A
Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2)
IFSM
200
A
Power dissipation on infinite heatsink, TA = 50 °C
PD
6.5
W
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
相关PDF资料
PDF描述
SMZJ3792A-E3/51 13 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
SA5.0-E3/1 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-204AC
SMA5J26A-E3/2G 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMA5J30-E3/2G 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
SMAJ58A/2F 400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
相关代理商/技术参数
参数描述
SMCG70AHE3/57T 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 70V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCG70A-HE3/57T 制造商:Vishay Semiconductors 功能描述:
SMCG70AHE3/59T 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 70V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCG70AHE3/9AT 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 70V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCG70A-M3/57T 制造商:Vishay Semiconductors 功能描述:1.5KW,70V 5%,UNIDIR,SMC TVS