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参数资料
| 型号： | SMCJ10A-TR |
| 厂商： | STMICROELECTRONICS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 6/10页 |
| 文件大小： | 125K |
| 代理商： | SMCJ10A-TR |
SMCJ
Characteristics
Doc ID 5617 Rev 8
5/10
Figure 6.
Junction capacitance versus
reverse applied voltage for
unidirectional types (typical values)
Figure 7.
Junction capacitance versus
reverse applied voltage for
bidirectional types (typical values)
0.01
0.10
1.00
10.00
1
10
100
1000
C(nF)
F=1 MHz
V
OSC=30 mVRMS
T
j=25 °C
SMCJ5.0A
SMCJ12A
SMCJ24A
SMCJ40A
SMCJ85A
SMCJ188A
VR(V)
0.01
0.10
1.00
10.00
1
10
100
1000
C(nF)
F=1 MHz
V
OSC=30 mVRMS
T
j=25 °C
SMCJ5.0CA
SMCJ12CA
SMCJ24CA
SMCJ40CA
SMCJ85CA
SMCJ188CA
VR(V)
Figure 8.
Peak forward voltage drop
versus peak forward current
(typical values)
Figure 9.
Relative variation of thermal
impedance, junction to ambient,
versus pulse duration
Figure 10. Thermal resistance junction to
ambient versus copper surface
under each lead
Figure 11. Leakage current versus junction
temperature (typical values)
I
FM(A)
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
j =25 °C
T
j =125 °C
VFM(V)
0.01
0.10
1.00
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
Z
th(j-a) /Rth(j-a)
tP(s)
Recommended pad layout
PCB FR4, copper thickness = 35 m
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
R
th(j-a) (°C/W)
SCU(cm)
PCB FR4, copper thickness = 35 m
IR (nA)
1.0E+00
1.0E+01
1.0E+02
1.0E+03
1.0E+04
25
50
75
100
125
150
V
R=VRM
V
RM ≥ 10 V
V
R=VRM
V
RM <10 V
Tj(°C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ10C | 功能描述:TVS 二极管 - 瞬态电压抑制器 10Vr 1500W 88.3A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ10-C | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:TRANSIENT VOLTAGE SUPPRESSORS |
| SMCJ10C/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ10C/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ10C/9AT | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 10V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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