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参数资料
| 型号： | SMCJ11C-M3/9AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 4/6页 |
| 文件大小： | 93K |
| 代理商： | SMCJ11C-M3/9AT |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89331
4
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 20-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
New Product
Note
(1) Mounted on minimum recommended pad layout
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Peak Pulse Power Rating Curve
Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature
Fig. 3 - Pulse Waveform
Fig. 4 - Typical Junction Capacitance
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to ambient
RJA (1)
75
°C/W
Typical thermal resistance, junction to lead
RJL
15
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SMCJ5.0A-M3/57T
0.211
57T
850
7" diameter plastic tape and reel
SMCJ5.0A-M3/9AT
0.211
9AT
3500
13" diameter plastic tape and reel
0.1
1
10
100
0.31" x 0.31" (8.0 mm x 8.0 mm)
Copper Pad Areas
P
PPM
-
P
eak
Pulse
P
o
w
e
r(kW)
td - Pulse Width (s)
0.1 s
1.0 s
10 s
100 s
1.0 ms
10 ms
0
255075
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
P
e
ak
Pulse
P
o
w
er
(P
PP
)or
Current
(I
PP
)
Der
ating
in
P
e
rcentage
,%
0
50
100
150
t
r = 10 s
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
t
d
10/1000 s Waveform
as defined by R.E.A.
0
1.0
2.0
3.0
4.0
t - Time (ms)
I PPM
-
P
e
ak
Pulse
Current,
%
I
RSM
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
20 000
10
1
100
400
Uni-Directional
Bi-Directional
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Zero Bias
V
R, Measured at
Stand-Off
Voltage V
WM
C
J-
J
unction
Capacitance
(pF)
VWM - Reverse Stand-Off Voltage (V)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ11C-TP | 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 11V 1.5KW 2-Pin SMC T/R |
| SMCJ11-E3/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 11V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ11-E3/51T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 11V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ11-E3/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 11V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ11-E3/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 11V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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