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参数资料
| 型号： | SMCJ12C |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | GREEN, PLASTIC, SMC, 2 PIN |
| 文件页数： | 4/5页 |
| 文件大小： | 171K |
| 代理商： | SMCJ12C |
Test
Stand-Off
Maximum
Current
Voltage
Reverse Leakage
IT
VWM
@ VWM
Min
Max
(mA)
(V)
ID (uA)
SMCJ45
GFU
50
61.1
1
45
5
19
80.3
SMCJ45A
GFV
50
55.3
1
45
5
21
72.7
SMCJ48
GFW
53.3
65.1
1
48
5
18
85.5
SMCJ48A
GFX
53.3
58.9
1
48
5
20
77.4
SMCJ51
GFY
56.7
69.3
1
51
5
17
91.1
SMCJ51A
GFZ
56.7
62.7
1
51
5
19
82.4
SMCJ54
GGD
60
73.3
1
54
5
16
96.3
SMCJ54A
GGE
60
66.3
1
54
5
18
87.1
SMCJ58
GGF
64.4
78.7
1
58
5
15
103
SMCJ58A
GGG
64.4
71.2
1
58
5
16
93.6
SMCJ60
GGH
66.7
81.5
1
60
5
14
107
SMCJ60A
GGK
66.7
73.7
1
60
5
16
96.8
SMCJ64
GGL
71.1
86.9
1
64
5
13.8
114
SMCJ64A
GGM
71.1
78.6
1
64
5
15
103
SMCJ70
GGN
77.8
95.1
1
70
5
12.6
125
SMCJ70A
GGP
77.8
86
1
70
5
13.9
113
SMCJ75
GGQ
83.3
102
1
75
5
11.7
134
SMCJ75A
GGR
83.3
92.1
1
75
5
13
121
SMCJ78
GGS
86.7
106
1
78
5
11.3
139
SMCJ78A
GGT
86.7
95.8
1
78
5
12.5
126
SMCJ85
GGU
94.4
115
1
85
5
10.4
151
SMCJ85A
GGV
94.4
104
1
85
5
11.5
137
SMCJ90
GGW
100
122
1
90
5
9.8
160
SMCJ90A
GGX
100
111
1
90
5
10.7
146
SMCJ100
GGY
111
136
1
100
5
8.8
179
SMCJ100A
GGZ
111
123
1
100
5
9.7
162
SMCJ110
GHD
122
149
1
110
5
8
196
SMCJ110A
GHE
122
135
1
110
5
8.9
177
SMCJ120
GHF
133
163
1
120
5
7.3
214
SMCJ120A
GHG
133
147
1
120
5
8.1
193
SMCJ130
GHH
144
176
1
130
5
6.8
231
SMCJ130A
GHK
144
159
1
130
5
7.5
209
SMCJ150
GHL
167
204
1
150
5
5.8
266
SMCJ150A
GHM
167
185
1
150
5
6.4
243
SMCJ160
GHN
178
218
1
160
5
5.4
287
SMCJ160A
GHP
178
197
1
160
5
6
259
SMCJ170
GHQ
189
231
1
170
5
5.1
304
SMCJ170A
GHR
189
209
1
170
5
5.7
275
Notes:
1. VBR measure after IT applied for 300us, IT=square wave pulse or equivalent.
2. Surge current waveform per Figure. 3 and derate per Figure. 2.
3. For bipolar types having VWM of 10 volts and less, the ID limit is doubled.
4. All terms and symbols are consistent with ANSI/IEEE C62.35.
Version:G11
Maximum
Clamping
Voltage at IPPM
Vc(V)
(Note5)
Maximum
Peak Pulse
Surge Current
IPPM
(A)(Note5)
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
Device
Marking
Code
Breakdown Voltage
VBR (V)
at IT
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ12-C | 制造商:SEMTECH_ELEC 制造商全称:SEMTECH ELECTRONICS LTD. 功能描述:TRANSIENT VOLTAGE SUPPRESSORS |
| SMCJ12C/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ12C/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ12C/7T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ12C/9AT | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 12V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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