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参数资料
| 型号： | SMCJ20CA |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/3页 |
| 文件大小： | 82K |
| 代理商： | SMCJ20CA |
RATING AND CHARACTERISTIC CURVES SMCJ SERIES
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
10
100
1000
1
10
100
P
eak
F
o
rw
ar
d
S
ur
ge
C
u
rr
e
n
t,Am
p
er
es
Fig.6 - Maximum Non-Repetitive Forward
Surge Current Uni-Directional Use Only
200
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = TJ max,
Number of Cycles at 60 Hz
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
T
rans
ient
T
her
m
a
lI
m
pedanc
e
(℃
/W)
Fig. 5 - Typ.Transient Thermal Impedance
tp-Pulse Duration (sec)
1.0
0.1
1
10
100
10ms
0.1s
1.0s
10s
100s
1.0ms
td - Pulse Width (sec.)
Fig. 1 - Peak Pulse Power Rating
P
PPM
-Pe
a
k
Pu
ls
e
Po
we
r(k
W)
0.31x0.31"(8.0x8.0mm)
Copper Pad Areas
1000
10
100
1000
10000
100000
VWM - Reverse Stand-Off Voltage (V)
400
C
J-
J
unc
ti
on
C
apa
c
it
anc
e(
pF
)
1.0
100
10
400
20000
Fig.4 - Typical Junction Capacitance
Uni-Directional
Measured at
Zero Bias
T
J = 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
V
R,Measured at
Stand-Off
Voltage, V
WM
Uni-Directional
Bi-Directional
t - Time(ms)
3.0
4.0
150
0
1.0
2.0
tr = 10sec.
Peak Value
IPPM
TJ = 25°C
Pulse Width(td)is defined
as the point where the
peak current decays to
50% of IPPM
10/1000sec.Waveform
as defined by R.E.A.
td
Fig.3 - Pulse Waveform
4.0
50
Half Value- IPPM
2
100
I PPM
-
P
eak
P
u
ls
e
C
u
rr
ent
,%
I
RS
M
3.0
0
12.5
25
37.5
50
62.5
75
87.5
100
0
0.2
0.4
0.6
0.8
1
1.2
Fig.2 - Pulse Derating Curve
P
eak
P
u
ls
e
P
o
w
e
r(
P
PP
)o
rCu
rre
n
t(I
PP
)
D
e
ra
ti
ng
in
P
e
rc
ent
age,
%
TA - Ambient Temperature (°C)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ20CA R6 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Bi-Dir 20V 1.5KW 2-Pin SMC T/R |
| SMCJ20CA | 制造商:Fairchild Semiconductor Corporation 功能描述:TVS Diode |
| SMCJ20CA/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 20V 5% Bidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ20CA/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 20V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ20CA/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 20V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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