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参数资料
| 型号： | SMCJ28C-W |
| 厂商： | RECTRON LTD |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 2/6页 |
| 文件大小： | 672K |
| 代理商： | SMCJ28C-W |
RATING AND CHARACTERISTIC CURVES (TFMCJ5.0 THRU TFMCJ170CA)
FIG. 2 - PULSE DERATING CURVE
P
E
A
K
P
U
LS
E
P
O
W
E
R
(P
P
)O
R
C
U
R
E
N
T
TA, AMBIENT TEMPERATURE,(
)
0
25
50
75
100 125 150 175 200
100
75
50
25
0
(IP
P
)D
E
R
A
TI
N
G
IN
P
E
R
C
E
N
TA
G
E
,%
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of IPPM
10/1000usec. Waveform
as Defined by R.E.A.
Peak Value
IPPM
tr = 10usec.
FIG. 3 - PULSE WAVEFORM
IP
P
M
,P
E
A
K
P
U
LS
E
C
U
R
E
N
T,
%
t, TIME,mS
0
1.0
2.0
3.0
4.0
50
100
150
HALF VALUE -IPPM
2
td
FIG. 1 - PEAK PULSE POWER RATING CURVE
P
M
,P
E
A
K
P
U
LS
E
P
O
W
E
R
,K
W
TP, PULSE WIDTH, sec
Non-Repetitive
Pulse Waveform
Shown in Fig.3
TA = 25
0.31X0.31"(8.0X8.0mm)
copper pad areas
100
10
1.0
0.1
0.1uS
1.0uS
10uS
100uS
1.0mS 10mS
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
C
J,
JU
N
C
TI
O
N
C
A
P
A
C
IT
A
N
C
E
,p
F
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
10000
1000
100
10
BIDIRECTIONAL
Measured at
Zero Bias
Measured at
Stand off
Voltage,VWM
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
C
J,
JU
N
C
TI
O
N
C
A
P
A
C
IT
A
N
C
E
,p
F
V(WM), BREAKDOWN VOLTACE, VOLTS
1.0
10
100
200
20000
10000
1000
100
10
UNIDIRECTIONAL
IF
S
M
,P
E
A
K
FO
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
A
M
P
E
R
E
S
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD
NUMBER OF CYCLES AT 60 Hz
200
100
10
1
10
100
8.3ms Single Half Sine-Wave
(JEDED Method)
SURGE CURRENT UNIDIRECTIONAL
Unidirectional only
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相关代理商/技术参数 |
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| SMCJ28-E3/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 28V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ28-E3/51T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ28-E3/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ28-E3/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ28-E3/9AT | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 28V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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