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参数资料
型号： SMCJ30/9AT-E3
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装： PLASTIC, SMC, 2 PIN
文件页数： 2/4页
文件大小： 42K
代理商： SMCJ30/9AT-E3
SMCJ5.0 thru 188CA
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88394
2
26-Sep-02
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 100A (uni-directional only)
Device
Breakdown Voltage
Maximum
Device Type
Marking
V(BR) at IT(1)
Test
Stand-off
Reverse Leakage Peak Pulse Surge
Clamping
Modified
Code
(V)
Current
Voltage
at VWM
Current IPPM
Voltage at IPPM
“J” Bend Lead
UNI
BI
Min
Max
IT (mA)
VWM (V)
ID (
A) (3)
(A)(2)
VC (V)
+SMCJ5.0
GDD
6.40
7.82
10.0
5.0
1000
156.3
9.6
+SMCJ5.0A(5)
GDE
6.40
7.07
10.0
5.0
1000
163.0
9.2
+SMCJ6.0
GDF
6.67
8.15
10.0
6.0
1000
131.6
11.4
+SMCJ6.0A
GDG
6.67
7.37
10.0
6.0
1000
145.6
10.3
+SMCJ6.5
GDH
BDH
7.22
8.82
10.0
6.5
500
122.0
12.3
+SMCJ6.5A
GDK
BDK
7.22
7.98
10.0
6.5
500
133.9
11.2
+SMCJ7.0
GDL
7.78
9.51
10.0
7.0
200
112.8
13.3
+SMCJ7.0A
GDM
7.78
8.60
10.0
7.0
200
125.0
12.0
+SMCJ7.5
GDN
BDN
8.33
10.2
1.0
7.5
100
104.9
14.3
+SMCJ7.5A
GDP
BDP
8.33
9.21
1.0
7.5
100
116.3
12.9
+SMCJ8.0
GDQ
BDG
8.89
10.9
1.0
8.0
50
100.0
15.0
+SMCJ8.0A
GDR
BDR
8.89
9.83
1.0
8.0
50
110.3
13.6
+SMCJ8.5
GDS
BDS
9.44
11.5
1.0
8.5
20
94.3
15.9
+SMCJ8.5A
GDT
BDT
9.44
10.4
1.0
8.5
20
104.2
14.4
+SMCJ9.0
GDU
BDU
10.0
12.2
1.0
9.0
10
88.8
16.9
+SMCJ9.0A
GDV
BDV
10.0
11.1
1.0
9.0
10
97.4
15.4
+SMCJ10
GDW
BDW
11.1
13.6
1.0
10
5.0
79.8
18.8
+SMCJ10A
GDX
BDX
11.1
12.3
1.0
10
5.0
88.2
17.0
+SMCJ11
GDY
12.2
14.9
1.0
11
5.0
74.6
20.1
+SMCJ11A
GDZ
12.2
13.5
1.0
11
5.0
82.4
18.2
+SMCJ12
GED
BED
13.3
16.3
1.0
12
5.0
68.2
22.0
+SMCJ12A
GEE
BEE
13.3
14.7
1.0
12
5.0
75.4
19.9
+SMCJ13
GEF
14.4
17.6
1.0
13
1.0
63.0
23.8
+SMCJ13A
GEG
14.4
15.9
1.0
13
1.0
69.8
21.5
+SMCJ14
GEH
BEH
15.6
19.1
1.0
14
1.0
58.1
25.8
+SMCJ14A
GEK
BEK
15.6
17.2
1.0
14
1.0
64.7
23.2
+SMCJ15
GEL
BEL
16.7
20.4
1.0
15
1.0
55.8
26.9
+SMCJ15A
GEM
BEM
16.7
18.5
1.0
15
1.0
61.5
24.4
+SMCJ16
GEN
17.8
21.8
1.0
16
1.0
52.1
28.8
+SMCJ16A
GEP
17.8
19.7
1.0
16
1.0
57.7
26.0
+SMCJ17
GEQ
18.9
23.1
1.0
17
1.0
49.2
30.5
+SMCJ17A
GER
18.9
20.9
1.0
17
1.0
54.3
27.6
+SMCJ18
GES
BES
20.0
24.4
1.0
18
1.0
46.6
32.2
+SMCJ18A
GET
BET
20.0
22.1
1.0
18
1.0
51.4
29.2
+SMCJ20
GEU
BEU
22.2
27.1
1.0
20
1.0
41.9
35.8
+SMCJ20A
GEV
BEV
22.2
24.5
1.0
20
1.0
46.3
32.4
+SMCJ22
GEW
BEW
24.4
29.8
1.0
22
1.0
38.1
39.4
+SMCJ22A
GEX
BEX
24.4
26.9
1.0
22
1.0
42.3
35.5
+SMCJ24
GEY
BEY
26.7
32.6
1.0
24
1.0
34.9
43.0
+SMCJ24A
GEZ
BEZ
26.7
29.5
1.0
24
1.0
38.6
38.9
+SMCJ26
GFD
BFD
28.9
35.3
1.0
26
1.0
32.2
46.6
+SMCJ26A
GFE
BFE
28.9
31.9
1.0
26
1.0
35.6
42.1
+SMCJ28
GFF
BFF
31.1
38.0
1.0
28
1.0
30.0
50.0
+SMCJ28A
GFG
BFG
31.1
34.4
1.0
28
1.0
33.0
45.4
+SMCJ30
GFH
BFH
33.3
40.7
1.0
30
1.0
28.0
53.5
+SMCJ30A
GFK
BFK
33.3
36.8
1.0
30
1.0
31.0
48.4
Notes: (1) Pulse test: tp
≤ 50ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) For bi-directional types having VWM of 10 Volts and less, the ID limit is doubled
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
(5) For the bi-directional SMCG/SMCJ5.0CA, the maximum V(BR) is 7.25V
+ Underwriters Laboratory Recognition for the classification of protectors (QVGQ2) under the UL standard for safety 497B and file number E136766
for both uni-directional and bi-directional devices
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