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参数资料
型号： SMCJ40C-E3/9AT
厂商： VISHAY SEMICONDUCTORS
元件分类： TVS二极管 - 瞬态电压抑制
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装： ROHS COMPLIANT, PLASTIC, SMC, 2 PIN
文件页数： 2/6页
文件大小： 117K
代理商： SMCJ40C-E3/9AT
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88394
Revision: 21-Oct-08
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE TYPE
MODIFIED
“J” BEND LEAD
DEVICE MARKING
CODE
BREAKDOWN
VOLTAGE
VBR AT IT
(1)
(V)
TEST
CURRENT
IT
(mA)
STAND-OFF
VOLTAGE
VWM
(V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM
ID (A)
(3)
MAXIMUM
PEAK PULSE
SURGE
CURRENT
IPPM (A)
(2)
MAXIMUM
CLAMPING
VOLTAGE AT
IPPM
VC (V)
UNI
BI
MIN.
MAX.
(+)SMCJ5.0
GDD
6.40
7.82
10.0
5.0
1000
156.3
9.6
(+)SMCJ5.0A(5)
GDE
6.40
7.07
10.0
5.0
1000
163.0
9.2
(+)SMCJ6.0
GDF
6.67
8.15
10.0
6.0
1000
131.6
11.4
(+)SMCJ6.0A
GDG
6.67
7.37
10.0
6.0
1000
145.6
10.3
(+)SMCJ6.5
GDH
BDH
7.22
8.82
10.0
6.5
500
122.0
12.3
(+)SMCJ6.5A
GDK
BDK
7.22
7.98
10.0
6.5
500
133.9
11.2
(+)SMCJ7.0
GDL
7.78
9.51
10.0
7.0
200
112.8
13.3
(+)SMCJ7.0A
GDM
7.78
8.60
10.0
7.0
200
125.0
12.0
(+)SMCJ7.5
GDN
BDN
8.33
10.2
1.0
7.5
100
104.9
14.3
(+)SMCJ7.5A
GDP
BDP
8.33
9.21
1.0
7.5
100
116.3
12.9
(+)SMCJ8.0
GDQ
BDG
8.89
10.9
1.0
8.0
50
100.0
15.0
(+)SMCJ8.0A
GDR
BDR
8.89
9.83
1.0
8.0
50
110.3
13.6
(+)SMCJ8.5
GDS
BDS
9.44
11.5
1.0
8.5
20
94.3
15.9
(+)SMCJ8.5A
GDT
BDT
9.44
10.4
1.0
8.5
20
104.2
14.4
(+)SMCJ9.0
GDU
BDU
10.0
12.2
1.0
9.0
10
88.8
16.9
(+)SMCJ9.0A
GDV
BDV
10.0
11.1
1.0
9.0
10
97.4
15.4
(+)SMCJ10
GDW
BDW
11.1
13.6
1.0
10
5.0
79.8
18.8
(+)SMCJ10A
GDX
BDX
11.1
12.3
1.0
10
5.0
88.2
17.0
(+)SMCJ11
GDY
12.2
14.9
1.0
11
5.0
74.6
20.1
(+)SMCJ11A
GDZ
12.2
13.5
1.0
11
5.0
82.4
18.2
(+)SMCJ12
GED
BED
13.3
16.3
1.0
12
5.0
68.2
22.0
(+)SMCJ12A
GEE
BEE
13.3
14.7
1.0
12
5.0
75.4
19.9
(+)SMCJ13
GEF
14.4
17.6
1.0
13
1.0
63.0
23.8
(+)SMCJ13A
GEG
14.4
15.9
1.0
13
1.0
69.8
21.5
(+)SMCJ14
GEH
BEH
15.6
19.1
1.0
14
1.0
58.1
25.8
(+)SMCJ14A
GEK
BEK
15.6
17.2
1.0
14
1.0
64.7
23.2
(+)SMCJ15
GEL
BEL
16.7
20.4
1.0
15
1.0
55.8
26.9
(+)SMCJ15A
GEM
BEM
16.7
18.5
1.0
15
1.0
61.5
24.4
(+)SMCJ16
GEN
17.8
21.8
1.0
16
1.0
52.1
28.8
(+)SMCJ16A
GEP
17.8
19.7
1.0
16
1.0
57.7
26.0
(+)SMCJ17
GEQ
18.9
23.1
1.0
17
1.0
49.2
30.5
(+)SMCJ17A
GER
18.9
20.9
1.0
17
1.0
54.3
27.6
(+)SMCJ18
GES
BES
20.0
24.4
1.0
18
1.0
46.6
32.2
(+)SMCJ18A
GET
BET
20.0
22.1
1.0
18
1.0
51.4
29.2
(+)SMCJ20
GEU
BEU
22.2
27.1
1.0
20
1.0
41.9
35.8
(+)SMCJ20A
GEV
BEV
22.2
24.5
1.0
20
1.0
46.3
32.4
(+)SMCJ22
GEW
BEW
24.4
29.8
1.0
22
1.0
38.1
39.4
(+)SMCJ22A
GEX
BEX
24.4
26.9
1.0
22
1.0
42.3
35.5
(+)SMCJ24
GEY
BEY
26.7
32.6
1.0
24
1.0
34.9
43.0
(+)SMCJ24A
GEZ
BEZ
26.7
29.5
1.0
24
1.0
38.6
38.9
(+)SMCJ26
GFD
BFD
28.9
35.3
1.0
26
1.0
32.2
46.6
(+)SMCJ26A
GFE
BFE
28.9
31.9
1.0
26
1.0
35.6
42.1
(+)SMCJ28
GFF
BFF
31.1
38.0
1.0
28
1.0
30.0
50.0
(+)SMCJ28A
GFG
BFG
31.1
34.4
1.0
28
1.0
33.0
45.4
(+)SMCJ30
GFH
BFH
33.3
40.7
1.0
30
1.0
28.0
53.5
(+)SMCJ30A
GFK
BFK
33.3
36.8
1.0
30
1.0
31.0
48.4
(+)SMCJ33
GFL
BFL
36.7
44.9
1.0
33
1.0
25.4
59.0
(+)SMCJ33A
GFM
BFM
36.7
40.6
1.0
33
1.0
28.1
53.3
(+)SMCJ36
GFN
BFN
40.0
48.9
1.0
36
1.0
23.3
64.3
(+)SMCJ36A
GFP
BFP
40.0
44.2
1.0
36
1.0
25.8
58.1
(+)SMCJ40
GFQ
BFQ
44.4
54.3
1.0
40
1.0
21.0
71.4
(+)SMCJ40A
GFR
BFR
44.4
49.1
1.0
40
1.0
23.3
64.5
相关PDF资料
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相关代理商/技术参数
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SMCJ40C-TP 制造商:Micro Commercial Components (MCC) 功能描述:Diode TVS Single Bi-Dir 40V 1.5KW 2-Pin SMC T/R
SMCJ40-E3/1T 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 40V 10% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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SMCJ40-E3/57T 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 40V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
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