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参数资料
| 型号： | SMCJ5632A/TR13 |
| 厂商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 3/3页 |
| 文件大小： | 426K |
| 代理商： | SMCJ5632A/TR13 |
Transient Voltage Suppressors
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3
Copyright
2003
01-24-2003 REV A
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCG5629 thru SMCG5665A
and SMCJ5629 thru SMCJ5665A
OUTLINE AND CIRCUIT
Pulse Time (tp)
FIGURE 1 Non-repetitive peak pulse power rating curve.
Note: Peak power defined as peak voltage times peak current.
BV: Breakdown Voltage in Volts
FIGURE 5 TYPICAL CAPACITANCE vs. BREAKDOWN VOLTAGE
FIGURE 2
Pulse wave form for exponential surge
FIGURE 3 Derating curve
PACKAGE DIMENSIONS
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115
.260
.220
.305
.075
.380
.025
.30
MAX
.121
.280
.245
.320
.095
.400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92
6.60
5.59
7.75
1.90
9.65
0.635
0.760
MAX
3.07
7.11
6.22
8.13
2.41
10.16
1.016
1.520
DO-214AB
DO-215AB
SMCG/J
5629
thru
SMCG/J
5665
A
Measured at
zero voltage
Measured at
Stand-off Voltage
C:
Ca
pacita
nc
ein
pi
co
farads
Exponential wave-
form (See FIG. 2)
Square-wave pulse
P
u
lse
cu
rren
t(I
P
)in
p
erce
n
tof
I
PP
Time (t) in milliseconds
Peak
pul
se
pow
er
(P
PP
)or
cur
rent
I
PP
(
sur
ge)
in
per
ce
nt
o
f2
5
o C
ra
ting
TA Ambient Temperature
oC
Stea
dy-
stat
e
p
o
w
e
r
dissipatio
n
(
w
atts)
TL – Lead Temperature
oC
FIGURE 4
Steady-state power
derating curve
Peak Value
IPP
Pulse time duration (tp) is
defined as that point where
IP decays to 50% of I
(surge).
Peak
Pulse
Power
(P
PP
)in
KW
相关PDF资料 |
PDF描述 |
|---|---|
| SMCG5631AE3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5630A/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCJ5632AE3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| SMCG5638E3/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
| SMCG5637/TR13 | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ5632E3/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 8.19V, VBRMAX = 10.0V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 7.37VWM 13.8VC DO214AB |
| SMCJ5633 | 制造商:Microsemi Corporation 功能描述:TVS SGL 8.1V 1.5KW 2PIN DO-214AB - Bulk |
| SMCJ5633/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 9.00V, VBRMAX = 11.0V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 8.1VWM 15VC DO214AB |
| SMCJ5633A | 制造商:Microsemi Corporation 功能描述:TVS SGL 8.55V 1.5KW 2PIN DO-214AB - Bulk |
| SMCJ5633A/TR13 | 制造商:Microsemi Corporation 功能描述:1500W, VBRMIN = 9.5V, VBRMAX = 10.5V, UNI-DIR - Tape and Reel 制造商:Microsemi Corporation 功能描述:TVS DIODE 8.55VWM 14.5VC DO214AB |
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