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参数资料
| 型号： | SMCJ75A |
| 厂商： | BOURNS INC |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件页数： | 4/5页 |
| 文件大小： | 364K |
| 代理商： | SMCJ75A |
Specications are subject to change without notice.
Customers should verify actual device performance in their specic applications.
SMCJ Transient Voltage Suppressor Diode Series
Rating & Characteristic Curves
Pulse Derating Curve
Maximum Non-Repetitive Surge Current
Pulse Waveform
Typical Junction Capacitance
Pulse Rating Curve
Steady State Power Derating Curve
100
75
50
25
0
050
25
75
100
150
125
175
200
Ambient Temperature (
Peak
Pulse
Derating
in
Per
cent
of
Peak
Power
or
Current
°C)
10 x 1000 Waveform as Defined
by R.E.A.
Peak
For
ward
Surge
Current
(Amps)
100
200
10
1
2
5
10
20
50
100
Number of Cycles at 60 Hz
Pulse Width 8.3 ms
Single Half Sine-Wave
(JEDEC Method)
100
50
0
1.0
2.0
3.0
4.0
T, Time (ms)
I P
,Peak
Pulse
Current
(%)
TA=25 °C
TP
TR=10 s
Half value=
IRSM
2
Peak value (IRSM)
Pulse width (TP)
is defined as that point
where the peak current
decays to 50 % of IPSM.
10 x 1000 waveform
as defined by R.E.A.
Capacitance
(pF)
10000
100
0
10
100
1000
Standoff Voltage (Volts)
1000
Bidirectional
TA = 25 °C
Unidirectional
5.0
3.0
4.0
2.0
1.0
0.0
050
25
75
100
150
125
175
200
TL, Lead Temperature (°C)
RM(A
V)
Steady
State
Power
Dissipation
(W)
60 Hz Resistive or
Inductive Load
100
10
1.0
0.1
0.1 s
1.0 s
10 s
10 ms
TP, Pulse Width
P
,Peak
Power
(KW)
100 s
1.0 ms
5.0 mm Lead Areas
TA = 25 °C
Non-repetitive Pulse Waveform
Shown in Pulse Waveform Graph
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMCJ75A R6 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 75V 1.5KW 2-Pin SMC T/R |
| SMCJ75A/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 75V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ75A/57T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 75V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ75A/59T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 75V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ75A/7T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 75V Unidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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