参数资料
型号: SMCJ75AP5
厂商: FAIRCHILD SEMICONDUCTOR CORP
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装: SMC, 2 PIN
文件页数: 2/7页
文件大小: 148K
代理商: SMCJ75AP5
SMCJ5.0(C)A
-
SMCJ170(C)A
SMCJ5.0(C)A-SMCJ170(C)A, Rev. C
Transient Voltage Supressors
(continued)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Uni-directional
Bi-directional (C)
Device
Part
Marking*
Reverse
Stand-off Voltage
VRWM (V)
Breakdown Voltage
VBR (V)
min
max
Test
Current
IT (mA)
Max Clamping
Voltage @IPPM
VC (V)
Max Peak Pulse
Surge Current
IPPM (A)
Max Reverse
Leakage VRWM
IR (uA)**
SMCJ5.0(C)A
GDE
5.0
6.40
7.0
10
9.2
163.0
1000
SMCJ6.0(C)A
GDG
6.0
6.67
7.37
10
10.3
145.6
1000
SMCJ6.5(C)A
GDK(BDK)
6.5
7.22
7.98
10
11.2
133.9
500
SMCJ7.0(C)A
GDM
7.0
7.78
8.60
10
12.0
125.0
200
SMCJ7.5(C)A
GDP(BDP)
7.5
8.33
9.21
1
12.9
116.3
100
SMCJ8.0(C)A
GDR(BDR)
8.0
8.89
9.83
1
13.6
110.3
50
SMCJ8.5(C)A
GDT(BDT)
8.5
9.44
10.4
1
14.4
104.2
20
SMCJ9.0(C)A
GDV(BDV)
9.0
10.0
11.1
1
15.4
97.4
10
SMCJ10(C)A
GDX(BDX)
10
11.1
12.3
1
17.0
88.2
5
SMCJ11(C)A
GDZ
11
12.2
13.5
1
18.2
82.4
5
SMCJ12(C)A
GEE(BEE)
12
13.3
14.7
1
19.9
75.3
5
SMCJ13(C)A
GEG
13
14.4
15.9
1
21.5
69.8
5
SMCJ14(C)A
GEK(BEK)
14
15.6
17.2
1
23.2
64.7
5
SMCJ15(C)A
GEM(BEM)
15
16.7
18.5
1
24.4
61.5
5
SMCJ16(C)A
GEP
16
17.8
19.7
1
26.0
57.7
5
SMCJ17(C)A
GER
17
18.9
20.9
1
27.6
54.3
5
SMCJ18(C)A
GET(BET)
18
20.0
22.1
1
29.2
51.4
5
SMCJ20(C)A
GEV(BEV)
20
22.2
24.5
1
32.4
46.3
5
SMCJ22(C)A
GEX(BEX)
22
24.4
26.9
1
35.5
42.3
5
SMCJ24(C)A
GEZ(BEZ)
24
26.7
29.5
1
38.9
38.6
5
SMCJ26(C)A
GFE(BFE)
26
28.9
31.9
1
42.1
35.6
5
SMCJ28(C)A
GFG(BFG)
28
31.1
34.4
1
45.4
33.0
5
SMCJ30(C)A
GFK(BFK)
30
33.3
36.8
1
48.4
31.0
5
SMCJ33(C)A
GFM(BFM)
33
36.7
40.6
1
53.3
28.1
5
SMCJ36(C)A
GFP(BFP)
36
40.0
44.2
1
58.1
25.8
5
SMCJ40(C)A
GFR(BFR)
40
44.4
49.1
1
64.5
23.3
5
SMCJ43(C)A
GFT(BFT)
43
47.8
52.8
1
69.4
21.6
5
SMCJ45(C)A
GFV
45
50.0
55.3
1
72.7
20.6
5
SMCJ48(C)A
GFX
48
53.3
58.9
1
77.4
19.4
5
SMCJ51(C)A
GFZ
51
56.7
62.7
1
82.4
18.2
5
SMCJ54(C)A
GGE
54
60.0
66.3
1
87.1
17.2
5
SMCJ58(C)A
GGG
58
64.4
71.2
1
93.6
16.0
5
SMCJ60(C)A
GGK
60
66.7
73.7
1
96.8
15.5
5
SMCJ64(C)A
GGM
64
71.1
78.6
1
103.0
14.6
5
SMCJ70(C)A
GGP
70
77.8
86.0
1
113.0
13.3
5
SMCJ75(C)A
GGR
75
83.3
92.1
1
121.0
12.4
5
SMCJ78(C)A
GGT
78
86.7
95.8
1
126.0
11.9
5
SMCJ85(C)A
GGV
85
94.4
104.0
1
137.0
10.9
5
SMCJ90(C)A
GGX
90
100.0
111.1
1
146.0
10.3
5
SMCJ100(C)A
GGZ
100
111.0
123.0
1
162.0
9.3
5
SMCJ110(C)A
GHE
110
122.0
135.0
1
177.0
8.5
5
SMCJ120(C)A
GHG
120
133.0
147.0
1
193.0
7.8
5
SMCJ130(C)A
GHK
130
144.0
159.0
1
209.0
7.2
5
SMCJ150(C)A
GHM
150
167.0
185.0
1
243.0
6.2
5
SMCJ160(C)A
GHP
160
178.0
197.0
1
259.0
5.8
5
SMCJ170(C)A
GHR
170
189.0
209.0
1
275.0
5.5
5
* Color band denotes cathode on unidirectional devices only. No color band on bidirectional
devices.
** For bidirectional parts with V
RWM<10V, the IR max limit is doubled.
相关PDF资料
PDF描述
SMCJ64CAP5 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ14CAMA 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ22CAMA 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ16CAMA 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
SMCJ24CAMA 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
相关代理商/技术参数
参数描述
SMCJ75A-TP 功能描述:TVS 二极管 - 瞬态电压抑制器 75V 1500 Watts RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCJ75C 功能描述:TVS 二极管 - 瞬态电压抑制器 75Vr 1500W 12.4A 10% BiDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCJ75C/57T 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 75V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCJ75C/59T 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 75V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
SMCJ75C/9AT 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W 75V Bidirect RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C