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参数资料
| 型号： | SMCJ8.0C-E3/9AT |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB |
| 封装： | ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件页数： | 5/6页 |
| 文件大小： | 117K |
| 代理商： | SMCJ8.0C-E3/9AT |
SMCJ5.0 thru SMCJ188CA
Vishay General Semiconductor
Document Number: 88394
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 5. Typical Transient Thermal Impedance
0.1
1.0
10
100
0.001
0.01
0.1
10
1
100
1000
tp - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
Figure 6. Maximum Non-Repetitive Forward Surge Current
Uni-Directional Use Only
1
10
100
10
100
200
T
J = TJ max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Pe
a
k
F
o
rw
ard
S
u
rge
C
u
rrent
(A)
0.260 (6.60)
0.280 (7.11)
0.006 (0.152)
0.012 (0.305)
0.030 (0.76)
0.060 (1.52)
0.008 (0.2)
0.305 (7.75)
0.320 (8.13)
0.220 (5.59)
0.246 (6.22)
0.079 (2.06)
0.103 (2.62)
0.114 (2.90)
0.126 (3.20)
Cathode Band
DO-214AB (SMC J-Bend)
0.320 REF.
0.060 (1.52)
MIN.
Mounting Pad Layout
0 (0)
0.126 (3.20)
MIN.
0.185 (4.69)
MAX.
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相关代理商/技术参数 |
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| SMCJ85 | 功能描述:TVS 二极管 - 瞬态电压抑制器 85Vr 1500W 11A 10% UniDirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ85A | 功能描述:TVS 二极管 - 瞬态电压抑制器 1500W TVS Unidirectional RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMCJ85A R6 | 制造商:SKMI/Taiwan 功能描述:Diode TVS Single Uni-Dir 85V 1.5KW 2-Pin SMC T/R |
| SMCJ85A | 制造商:Littelfuse 功能描述:TVS DIODE 1.5KW 85V DO-214AB |
| SMCJ85A/1T | 功能描述:TVS 二极管 - 瞬态电压抑制器 1.5KW 85V 5% Unidir RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
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