参数资料
型号: SMCJ90E3TR
厂商: MICROSEMI CORP-SCOTTSDALE
元件分类: 参考电压二极管
英文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 4/4页
文件大小: 198K
代理商: SMCJ90E3TR
SURFACE MOUNT 1500 Watt
Transient Voltage Suppressor
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 4
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMCJ5.0 thru SMCJ170CA, e3
and SMCG5.0 thru SMCG170CA, e3
SMC
5.0–170CA,
e3
GRAPHS
Copyright
2009
SA3-43, REV F, 5-24-09
FIGURE 2
– PULSE WAVEFORM
100
10
1.0
0
(Waveform – See Figure 2)
Non-repetitive
(P
PP
)–
Peak
Pul
se
Power
-
kW
Test wave form
parameterxs
tr = 10
μsec.
tp = 1000
μsec.
1
μs
10
μsec
100
μsec
1ms
10ms
tp – Pulse Time – sec
FIGURE 1 –
Peak Pulse Power vs. Pulse Time
PAD LAYOUT
INCHES
mm
A
.390
9.90
B
.110
2.79
C
.150
3.81
INCHES
mm
A
0.510
12.95
B
0.110
2.79
C
0.150
3.81
TL Lead Temperature
oC
FIGURE 4
FIGURE 3 – Derating Curve
T
ypical Capacitance vs.
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMCJ
SMCG
Breakdown Voltage
PACKAGE DIMENSIONS
DO-214AB
DO-215AB
DIMENSIONS IN INCHES
A
B
C
D
E
F
K
L
MIN
.115 .260 .220 .305 .077 .380
.025
.030
MAX
.121 .280 .245 .320 .104 .400
.040
.060
DIMENSIONS IN MILLIMETERS
MIN
2.92 6.60 5.59 7.75 1.95 9.65
0.635 .760
MAX
3.07 7.11 6.22 8.13 2.65 10.16 1.016 1.520
Typical Standoff Height: 0.004” – 0.008” (0.1mm – 0.2mm)
相关PDF资料
PDF描述
SB1100 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41
SB1150 1 A, 150 V, SILICON, SIGNAL DIODE, DO-41
SML4742-61 12 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SML4750A/51 27 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AC
SMZJ3798B/5B 24 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
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