参数资料
型号: SMDA12CDR2G
厂商: ON SEMICONDUCTOR
元件分类: TVS二极管 - 瞬态电压抑制
英文描述: 300 W, BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封装: HALOGEN FREE AND ROHS COMPLIANT, CASE 751-07, SOIC-8
文件页数: 3/4页
文件大小: 125K
代理商: SMDA12CDR2G
SMDA05C Series
http://onsemi.com
3
%
OF
PEAK
PULSE
CURRENT
Figure 1. Pulse Width
Figure 2. 8 × 20 ms Pulse Waveform
100
10
1
10
100
1000
t, TIME (ms)
1000
NOTE: NonRepetitive Surge.
100
90
80
70
60
50
40
30
20
10
0
020
40
60
80
t, TIME (ms)
tP
tr
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
PEAK VALUE IRSM @ 8 ms
HALF VALUE IRSM/2 @ 20 ms
P
pk
,PEAK
SURGE
POWER
(W
ATTS)
ORDERING INFORMATION
Device
Marking
Package
Shipping
SMDA05CDR2G
TBD
SO8
(PbFree)
2500 / Tape & Reel
SMDA12CDR2G
TBD
SO8
(PbFree)
2500 / Tape & Reel
SMDA15CDR2G
TBD
SO8
(PbFree)
2500 / Tape & Reel
SMDA24CDR2G
TBD
SO8
(PbFree)
2500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相关PDF资料
PDF描述
SMDA15-7-G 300 W, BIDIRECTIONAL, 7 ELEMENT, SILICON, TVS DIODE
SMDA24-7-G 300 W, BIDIRECTIONAL, 7 ELEMENT, SILICON, TVS DIODE
SMDA15CN-5.TB 300 W, BIDIRECTIONAL, 6 ELEMENT, SILICON, TVS DIODE, MS-012AA
SMDF106 1 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
SMDF102 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE
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