参数资料
| 型号： | SMDA12CDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY 4CH BIDIRECTIONAL |
| 标准包装： | 2,500 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 300W |
| 电极标记： | 4 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
SMDA05C Series
SMDA05C ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Working Voltage
Reverse Breakdown Voltage @ I t = 1.0 mA
Reverse Leakage Current @ V RWM = 5 Volts
Maximum Clamping Voltage @ I PP = 1.0 A, 8 x 20 m s
Maximum Clamping Voltage @ I PP = 5.0 A, 8 x 20 m s
Maximum Peak Pulse Current, 8 x 20 m s
Junction Capacitance @ V R = 0 V, f = 1 MHz
Symbol
V RWM
V BR
I R
V C
V C
I PP
C J
Min
?
6.0
N/A
N/A
N/A
?
?
Typ
?
?
?
?
?
?
?
Max
5.0
?
20
9.8
11
17
350
Unit
V
V
m A
V
V
A
pF
SMDA12C ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Working Voltage
Reverse Breakdown Voltage @ I t = 1.0 mA
Reverse Leakage Current @ V RWM = 12 Volts
Maximum Clamping Voltage @ I PP = 1.0 A, 8 x 20 m s
Maximum Clamping Voltage @ I PP = 5.0 A, 8 x 20 m s
Maximum Peak Pulse Current, 8 x 20 m s
Junction Capacitance @ V R = 0 V, f = 1 MHz
Symbol
V RWM
V BR
I R
V C
V C
I PP
C J
Min
?
13.3
N/A
N/A
N/A
?
?
Typ
?
?
?
?
?
?
?
Max
12
?
1.0
19
24
12
120
Unit
V
V
m A
V
V
A
pF
SMDA15C ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Working Voltage
Reverse Breakdown Voltage @ I t = 1.0 mA
Reverse Leakage Current @ V RWM = 15 Volts
Maximum Clamping Voltage @ I PP = 1.0 A, 8 x 20 m s
Maximum Clamping Voltage @ I PP = 5.0 A, 8 x 20 m s
Maximum Peak Pulse Current, 8 x 20 m s
Junction Capacitance @ V R = 0 V, f = 1 MHz
Symbol
V RWM
V BR
I R
V C
V C
I PP
C J
Min
?
16.7
N/A
N/A
N/A
?
?
Typ
?
?
?
?
?
?
?
Max
15
?
1.0
24
30
10
75
Unit
V
V
m A
V
V
A
pF
SMDA24C ELECTRICAL CHARACTERISTICS
Characteristic
Reverse Working Voltage
Reverse Breakdown Voltage @ I t = 1.0 mA
Reverse Leakage Current @ V RWM = 24 Volts
Maximum Clamping Voltage @ I PP = 1.0 A, 8 x 20 m s
Maximum Clamping Voltage @ I PP = 5.0 A, 8 x 20 m s
Maximum Peak Pulse Current, 8 x 20 m s
Junction Capacitance @ V R = 0 V, f = 1 MHz
Symbol
V RWM
V BR
I R
V C
V C
I PP
C J
Min
?
26.7
N/A
N/A
N/A
?
?
Typ
?
?
?
?
?
?
?
Max
24
?
1.0
43
55
5.0
50
Unit
V
V
m A
V
V
A
pF
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相关代理商/技术参数 |
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| SMDA12CE3/TR13 | 制造商:Microsemi Corporation 功能描述:4 LINE BI-DIR, 300W (8/20US), STAND-OFF VOLTAGE = 12V - Bulk 制造商:Microsemi Corporation 功能描述:TVS DIODE 12VWM 19VC 8SOIC |
| SMDA12CE3/TR7 | 功能描述:TVS ARRAY 4 LINES BIDIR SO-8 RoHS:是 类别:过电压，电流，温度装置 >> TVS - 二极管 系列:TVS Array™ 标准包装:1,800 系列:TransZorb® 电压 - 反向隔离（标准值）:28V 电压 - 击穿:31.1V 功率（瓦特）:400W 电极标记:双向 安装类型:表面贴装 封装/外壳:DO-214AC，SMA 供应商设备封装:DO-214AC（SMA） 包装:带卷 (TR) 其它名称:SMAJ28CA-E3/61-NDSMAJ28CA-E3/61GITR |
| SMDA12C-G | 制造商:SENSITRON 制造商全称:Sensitron 功能描述:TVS ARRAY SERIES |
| SMDA12C-LF | 制造商:ProTek Devices 功能描述:SMDA12C Series 4 Ch 25.9 Vcl 13.3 Vbr 105 pF Bidirectional TVS Array - SOIC-8 |
| SMDA12C-LF-T13 | 制造商:ProTek Devices 功能描述:SMDA12C Series 4 Ch 25.9 Vcl 13.3 Vbr 105 pF Bidirectional TVS Array - SOIC-8 |
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