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参数资料
| 型号： | SMDJ-65608EV-30SB |
| 厂商： | TEMIC SEMICONDUCTORS |
| 元件分类： | Static RAM |
| 英文描述： | 128K X 8 STANDARD SRAM, 30 ns, DFP32 |
| 封装： | 0.400 INCH, FP-32 |
| 文件页数： | 1/10页 |
| 文件大小： | 159K |
| 代理商： | SMDJ-65608EV-30SB |
M65608E
Rev. E – June 5, 2000
1
Introduction
The M65608E is a very low power CMOS static RAM
organized as 131072
× 8 bits.
TEMIC brings the solution to applications where fast
computing is as mandatory as low consumption, such as
aerospace
electronics,
portable
instruments,
or
embarked systems.
Utilizing an array of six transistors (6T) memory cells,
the M65608E combines an extremely low standby
supply current (Typical value = 0.2
A) with a fast
access time at 30 ns over the full military temperature
range. The high stability of the 6T cell provides
excellent protection against soft errors due to noise.
The M65608E is processed according to the methods of
the latest revision of the MIL STD 883 (class B or S),
ESA SCC 9000 or QML.
Features
D Access time: 30, 45 ns
D Very low power consumption
active : 250 mW (Typ)
standby : 1
W (Typ)
data retention : 0.5
W (Typ)
D Wide temperature Range : –55 To +125°C
D 400 Mils width package
D TTL compatible inputs and outputs
D Asynchronous
D Single 5 volt supply
D Equal cycle and access time
D Gated inputs :
no pull-up/down
resistors are required
Interface
Block Diagram
128 K
8 Very Low Power CMOS SRAM Rad Tolerant
相关PDF资料 |
PDF描述 |
|---|---|
| SMDJ-65608EV-45SB | 128K X 8 STANDARD SRAM, 45 ns, DFP32 |
| SMK2-67025EV-30SB | 8K X 16 DUAL-PORT SRAM, 30 ns, QFP84 |
| SMFR-29C516E-31SB | CMOS SERIES, 16-BIT ERROR DETECT AND CORRECT CKT, TRUE OUTPUT, PQFP100 |
| SMKR-29C516E-31SB | CMOS SERIES, 16-BIT ERROR DETECT AND CORRECT CKT, TRUE OUTPUT, PQFP100 |
| TODV225ALT | THYRISTOR MODULE|TRIAC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SMDJ-65608EV-45SB | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Tolerant 128K x 8 Very Low Power 5V CMOS SRAM |
| SMDJ-65609EV-40/8831 | 制造商:ATMEL 制造商全称:ATMEL Corporation 功能描述:Rad. Hard 128K x 8 3.3-volt Very Low Power CMOS SRAM |
| SMDJ7.0 | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS Diode SMC Suf MT RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMDJ7.0A | 功能描述:TVS 二极管 - 瞬态电压抑制器 TVS Diode SMC Suf MT RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SMDJ7.0A-T7 | 功能描述:可复位保险丝 7V 5% 3KW TVS DO214AB UNI RoHS:否 制造商:Bourns 电流额定值: 电阻:7.5 Ohms 最大直流电压: 保持电流:0.1 A 安装风格:SMD/SMT 端接类型:SMD/SMT 跳闸电流:0.6 A 引线间隔: 系列:MF-PSHT 工作温度范围:- 40 C to + 125 C |
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