参数资料
| 型号： | SMF05CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS ARRAY 5LINE 100W 5V SC-88 |
| 产品目录绘图： | SOT-323-5, SC-88A |
| 标准包装： | 10 |
| 电压 - 反向隔离（标准值）： | 5V |
| 电压 - 击穿： | 6.2V |
| 功率（瓦特）： | 100W |
| 电极标记： | 5 通道阵列 - 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 6-TSSOP，SC-88，SOT-363 |
| 供应商设备封装： | SC-88 |
| 包装： | 标准包装 |
| 产品目录页面： | 2380 (CN2011-ZH PDF) |
| 其它名称： | SMF05CT1GOSDKR |
SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G
SMF05CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
5.0
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 5 V
I PP = 5 A (8 x 20 m s Waveform)
I PP = 8 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
6.2
0.07
80
7.2
5.0
9.8
12.5
8.0
130
V
m A
V
V
A
pF
SMF12CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
12
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 12 V
I PP = 3 A (8 x 20 m s Waveform)
I PP = 6 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
13.3
0.01
40
15
0.1
21
23
6.0
60
V
m A
V
V
A
pF
SMF15CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
15
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 15 V
I PP = 1 A (8 x 20 m s Waveform)
I PP = 5 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
17
0.01
33
19
1.0
23
29
5.0
45
V
m A
V
V
A
pF
SMF24CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
24
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 24 V
I PP = 1 A (8 x 20 m s Waveform)
I PP = 2.5 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
26.7
0.01
21
32
1.0
40
44
2.5
25
V
m A
V
V
A
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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