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参数资料
| 型号： | SMF11A/G2 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | TVS二极管 - 瞬态电压抑制 |
| 英文描述： | 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB |
| 封装： | PLASTIC, SMF, 2 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 122K |
| 代理商： | SMF11A/G2 |
VISHAY
SMF5.0A to SMF51A
Document Number 85811
Rev. 4, 17-Mar-03
Vishay Semiconductors
www.vishay.com
1
17249
Surface Mount ESD Protection Diodes
\
Features
For surface mounted applications
Low-profile package
Optimized for LAN protection applications
Ideal for ESD protection of data lines in
accordance with IEC 1000-4-2 (IEC801-2)
Ideal for EFT protection of data lines in
accordance with IEC 1000-4-4 (IEC801-4)
IEC 1000-4-2 (ESD) 15 kV (air) 8 kV (contact)
IEC 1000-4-4 (EFT) 40 A (tp = 5/ 50 ns)
IEC 1000-4-5 (Lightning) 24 A (tp = 8/ 20
s)
Low incremental surge resistance, excellent
clamping capability
200 W peak pulse power capability with a
10/1000
s waveform, repetition rate
(duty cycle): 0.01 %
Very fast response time
High temperature soldering guaranteed:
260 °C/ 10 seconds at terminals
Mechanical Data
Case: JEDEC DO-219-AB (SMF) Plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
Polarity:The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.00035 oz, 0.01g
Packaging Codes/Options:
G1/10 K per 13 " reel (8 mm tape), 50 K/box
G2/3 K per 7 " reel (8 mm tape), 30 K/box
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
1) Non-repetitive current pulse and derated above T
A = 25 °C
Maximum Thermal Resistance
Ratings at 25 °C, ambient temperature unless otherwise specified
2) Mounted on epoxy substrate with 3 x 3 mm, cu pads (≥ 40 m thick)
Parameter
Test condition
Symbol
Value
Unit
Peak pulse power dissipation
10/1000
s waveform1)
PPPM
200
W
8/20
s waveform1)
PPPM
1000
W
Peak pulse current
10/1000
s waveform1)
IPPM
next
Table
A
Peak forward surge current
8.3 ms single half sine-wave
IFSM
20
A
Parameter
Symbol
Value
Unit
Thermal resistance
2)
RthJA
180
K/W
Operation junction and storage
temperature range
Tstg, TJ
- 55 to + 150
°C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SMF11A-GS08 | 功能描述:ESD 抑制器 11 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF11A-GS18 | 功能描述:ESD 抑制器 11 Volt 200 Watt 5% RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C |
| SMF11A-M | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Surface Mount ESD Protection Diodes |
| SMF11A-M-08 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
| SMF11A-M-18 | 制造商:Vishay Semiconductors 功能描述:ESD PROTECTION DIODE SMF DO219-E3-M |
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